5秒后页面跳转
DMN2016LHAB PDF预览

DMN2016LHAB

更新时间: 2024-11-26 01:13:07
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
6页 302K
描述
Low On-Resistance

DMN2016LHAB 数据手册

 浏览型号DMN2016LHAB的Datasheet PDF文件第2页浏览型号DMN2016LHAB的Datasheet PDF文件第3页浏览型号DMN2016LHAB的Datasheet PDF文件第4页浏览型号DMN2016LHAB的Datasheet PDF文件第5页浏览型号DMN2016LHAB的Datasheet PDF文件第6页 
DMN2016LHAB  
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features  
Low On-Resistance  
ID  
TA = +25°C  
7.5A  
V(BR)DSS  
RDS(on)max  
Low Gate Threshold Voltage  
15.5mΩ @ VGS = 4.5V  
16.5mΩ @ VGS = 4.0V  
19mΩ @ VGS = 3.1V  
20mΩ @ VGS = 2.5V  
30mΩ @ VGS = 1.8V  
Low Input Capacitance  
7.3A  
Fast Switching Speed  
20V  
6.9A  
ESD Protected Gate  
6.7A  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
5.4A  
Description  
Mechanical Data  
This new generation MOSFET has been designed to minimize the on-  
state resistance (RDS(ON) and yet maintain superior switching  
Case: U-DFN2030-6  
)
Case Material: Molded Plastic, “Green” Molding Compound. UL  
Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish – NiPdAu over Copper leadframe. Solderable  
per MIL-STD-202, Method 208 e4  
performance, making it ideal for high efficiency power management  
applications.  
Applications  
Weight: 0.012 grams (approximate)  
Power Management Functions  
Battery Pack  
Load Switch  
Bottom Drain Contact  
G1  
S1  
S1  
U-DFN2030-6  
D2  
S2  
D1  
S1  
G2  
S2  
S2  
D1/D2  
D1/D2  
G2  
G1  
G1  
S1  
S1  
ESD PROTECTED TO 2kV  
Gate Protection  
Diode  
Gate Protection  
Diode  
Bottom View  
G2  
S2  
S2  
Top View  
Pin Configuration  
Ordering Information (Note 4)  
Part Number  
DMN2016LHAB-7  
Case  
U-DFN2030-6  
Packaging  
3,000 / Tape & Reel  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
26W = Product Type Marking Code  
YYWW = Date Code Marking  
YY = Last digit of year (ex: 12 for 2012)  
WW = Week code (01 to 53)  
26W  
1 of 6  
www.diodes.com  
July 2014  
© Diodes Incorporated  
DMN2016LHAB  
Document number: DS36133 Rev. 5 - 2  

与DMN2016LHAB相关器件

型号 品牌 获取价格 描述 数据表
DMN2016LHAB_15 DIODES

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2016LHAB-7 DIODES

获取价格

Low On-Resistance
DMN2016UFX DIODES

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2016UTS DIODES

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2019UTS DIODES

获取价格

Low On-Resistance
DMN2019UTS_15 DIODES

获取价格

20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2019UTS-13 DIODES

获取价格

Low On-Resistance
DMN2020LSN DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2020LSN TYSEMI

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET Low Input Capacitance
DMN2020LSN-7 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET