DMN2016LHAB
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
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Low On-Resistance
ID
TA = +25°C
7.5A
V(BR)DSS
RDS(on)max
Low Gate Threshold Voltage
15.5mΩ @ VGS = 4.5V
16.5mΩ @ VGS = 4.0V
19mΩ @ VGS = 3.1V
20mΩ @ VGS = 2.5V
30mΩ @ VGS = 1.8V
Low Input Capacitance
7.3A
Fast Switching Speed
20V
6.9A
ESD Protected Gate
6.7A
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
5.4A
Description
Mechanical Data
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON) and yet maintain superior switching
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Case: U-DFN2030-6
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Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208 e4
performance, making it ideal for high efficiency power management
applications.
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Applications
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Weight: 0.012 grams (approximate)
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Power Management Functions
Battery Pack
Load Switch
Bottom Drain Contact
G1
S1
S1
U-DFN2030-6
D2
S2
D1
S1
G2
S2
S2
D1/D2
D1/D2
G2
G1
G1
S1
S1
ESD PROTECTED TO 2kV
Gate Protection
Diode
Gate Protection
Diode
Bottom View
G2
S2
S2
Top View
Pin Configuration
Ordering Information (Note 4)
Part Number
DMN2016LHAB-7
Case
U-DFN2030-6
Packaging
3,000 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
26W = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 12 for 2012)
WW = Week code (01 to 53)
26W
1 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMN2016LHAB
Document number: DS36133 Rev. 5 - 2