Datasheet > DMN2019UTS_15

DMN2019UTS_15

更新时间： 2024-02-12 18:00:01

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	229K
描述
20V N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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DMN2019UTS_15 数据手册

DMN2019UTS

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features

•

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

ESD Protected up to 2KV

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 standards for High Reliability

I_Dmax

T_A= 25°C

V_(BR)DSS

R_DS(ON)max

18.5mΩ @ V_GS= 10V

21mΩ @ V_GS= 4.5V

24mΩ @ V_GS= 2.5V

31mΩ @ V_GS= 1.8V

5.4 A

5.0 A

4.6 A

3.5 A

20V

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R_DS(on)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Mechanical Data

•

Case: TSSOP-8

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram Below

Weight: 0.039 grams (approximate)

•

Applications

•

Power management functions

Load Switch

TSSOP-8

N-Channel

Top View

Pin Configuration

Top View

ESD PROTECTED TO 2kV

Bottom View

Internal Schematic

Ordering Information (Note 4)

Part Number

DMN2019UTS-13

Case

TSSOP-8

Packaging

2500/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Logo

Part no

N2019U

YY WW

Xth week: 01~53

Year: “12” = 2012

Top View

1 of 6

www.diodes.com

December 2012

DMN2019UTS

Document number: DS35556 Rev. 2 - 2

12 3 4 5 6

中文翻译

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