Datasheet > DMN2020LSN

DMN2020LSN

更新时间： 2024-02-23 04:32:02

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	153K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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DMN2020LSN 数据手册

DMN2020LSN

N-CHANNEL ENHANCEMENT MODE MOSFET

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Features

Mechanical Data

•

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

ESD Protected Up To 2KV

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

•

Case: SC-59

Case Material - Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Marking Information: See Page 2

Ordering Information: See Page 2

Weight: 0.008 grams (approximate)

•

Qualified to AEC-Q101 Standards for High Reliability

SC-59

Drain

Gate

Protection

Diode

Source

TOP VIEW

Pin Out Configuration

ESD PROTECTED TO 2kV

TOP VIEW

EQUIVALENT CIRCUIT

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Symbol

V_DSS

Value

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous

±12

V_GSS

_A= 25°C

Steady

State

6.9

4.5

Continuous Drain Current

Pulsed Drain Current (Note 4)

I_D

T_A= 85°C

I_DM

Thermal Characteristics

Characteristic

Power Dissipation (Note 3)

Symbol

P_D

Value

0.61

204

Units

Thermal Resistance, Junction to Ambient @T_A= 25°C (Note 3)

Operating and Storage Temperature Range

°C /W

°C

R_θ

-55 to +150

T_J, T_STG

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

1 of 6

www.diodes.com

September 2009

DMN2020LSN

Document number: DS31946 Rev. 2 - 2

12 3 4 5 6

中文翻译

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