DMN2023UCB4
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Product Summary
Features
IS
Built-in G-S Protection Diode Against ESD 2kV HBM
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Package
V(BR)DSS
RSS(ON)
TA = +25°C
6.0A
24V
X1-WLB1818-4
26mΩ @ VGS = 4.5V
Description
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) with thin WLCSP packaging process and yet
maintain superior switching performance, making it ideal for high
efficiency power management applications.
Case: X1-WLB1818-4
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Applications
Battery Management
Load Switch
Battery Protection
X1-WLB1818-4
G1
G2
ESD PROTECTED TO 2kV
S1
S2
N-Channel
N-Channel
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN2023UCB4-7
Case
X1-WLB1818-4
Packaging
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
X1-WLB1818-4
8W = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: Y = 2011)
M or M = Month (ex: 9 = September)
8W
YM
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 8
www.diodes.com
March 2015
© Diodes Incorporated
DMN2023UCB4
Document number: DS35829 Rev. 10 - 2