Datasheet > DMN2024UVT

DMN2024UVT

更新时间： 2023-12-06 20:11:21

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	530K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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DMN2024UVT 数据手册

DMN2024UVT

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits



Low On-Resistance

I_D

BV_DSS

R_{DS(ON) Max}

Low-Input Capacitance

T_A= +25°C

Fast Switching Speed

Low Input/Output Leakage

24mΩ @ V_GS= 4.5V

28mΩ @ V_GS= 2.5V

20V

ESD Protected Gate

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

For automotive applications requiring specific change control

(i.e. parts qualified to AEC-Q101, PPAP capable, and

manufactured in IATF 16949 certified facilities), please

https://www.diodes.com/quality/product-definitions/

Description



This new generation MOSFET is designed to minimize the on-state

resistance (R_DS(ON)) yet maintain superior switching performance,

which makes it ideal for high-efficiency power management

applications.

Mechanical Data



Case: TSOT26

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals Connections: See Diagram

Applications



Backlighting

DC-DC Converters

Power Management Functions

Terminals: Finish—Matte Tin Annealed Over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

Weight: 0.013 grams (Approximate)



ESD Protected Gate

Equivalent Circuit

TSOT26

Top View

Ordering Information (Note 4)

Part Number

DMN2024UVT-7

DMN2024UVT-13

Case

TSOT26

Packaging

3000/Tape & Reel

10,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

AR4 = Product Type Marking Code

YM = Date Code Marking

AR4

Y or Y = Year (ex: G = 2019)

M = Month (ex: 9 = September)

Date Code Key

Year

2018

2019

2020

2021

2022

2023

2024

2025

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 7

www.diodes.com

October 2019

DMN2024UVT

Document number: DS40961 Rev. 4 - 2

12 3 4 5 6 7

中文翻译

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与DMN2024UVT相关器件

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DMN2024UVTQ	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
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DMN2025UFDB	DIODES	获取价格	DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2025UFDF	DIODES	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2026UVT	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2026UVT-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2026UVT-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2027LK3	DIODES	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2027LK3-13	DIODES	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET
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