Datasheet > DMN2016UTS

DMN2016UTS

更新时间： 2024-09-25 09:54:11

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	167K
描述
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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DMN2016UTS 数据手册

DMN2016UTS

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Features

Mechanical Data

•

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 1)

ESD Protected Up To 2KV

"Green" Device (Note 2)

•

Case: TSSOP-8L

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram Below

Marking Information: See Page 4

•

Ordering Information: See Page 4

Weight: 0.039 grams (approximate)

Qualified to AEC-Q101 Standards for High Reliability

TSSOP-8L

BOTTOM VIEW

Top View

Pin Configuration

TOP VIEW

ESD PROTECTED TO 2kV

Internal Schematic

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

Gate-Source Voltage

±8

T_A= 25°C

T_A= 85°C

Steady

State

8.58

5.73

Continuous Drain Current (Note 3)

Pulsed Drain Current (Note 4)

I_D

I_DM

Thermal Characteristics

Characteristic

Power Dissipation (Note 3)

Symbol

Value

Unit

0.88

P_D

141.57

°C/W

°C

Thermal Resistance, Junction to Ambient @T_A= 25°C (Note 3)

Operating and Storage Temperature Range

R_θJA

-55 to +150

T_J, T_STG

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

1 of 6

www.diodes.com

December 2009

DMN2016UTS

Document number: DS31995 Rev. 1 - 2

12 3 4 5 6

中文翻译

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