5秒后页面跳转
DMN2013UFX PDF预览

DMN2013UFX

更新时间: 2024-01-25 20:39:28
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
6页 280K
描述
Low On-Resistance

DMN2013UFX 数据手册

 浏览型号DMN2013UFX的Datasheet PDF文件第2页浏览型号DMN2013UFX的Datasheet PDF文件第3页浏览型号DMN2013UFX的Datasheet PDF文件第4页浏览型号DMN2013UFX的Datasheet PDF文件第5页浏览型号DMN2013UFX的Datasheet PDF文件第6页 
DMN2013UFX  
Dual N-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features and Benefits  
Low On-Resistance  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
ESD Protected  
I
D max  
V(BR)DSS  
RDS(ON) max  
TA = +25°C  
11.5m@ VGS = 4.5V  
14m@ VGS = 2.5V  
10 A  
20V  
9 A  
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
Description  
This new generation MOSFET has been designed to minimize the on-  
state resistance (RDS(on)) and yet maintain superior switching  
performance, making it ideal for high efficiency power management  
applications.  
Mechanical Data  
Case: W-DFN5020-6  
Case Material: Molded Plastic, “Green” Molding Compound. UL  
Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminal Connections: See Diagram Below  
Weight: 0.03 grams (approximate)  
Applications  
General Purpose Interfacing Switch  
Power Management Functions  
G1 S1 S1  
W-DFN5020-6  
D1/D2  
ESD PROTECTED  
G2 S2 S2  
Top View  
Bottom View  
Equivalent Circuit  
Top View  
Pin-Out  
Ordering Information (Note 4)  
Part Number  
Case  
Packaging  
DMN2013UFX-7  
W-DFN5020-6  
3000 / Tape & Reel  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
FX = Product Type Marking Code  
YM = Date Code Marking  
Y = Year (ex: X = 2010)  
M = Month (ex: 9 = September)  
Date Code Key  
Year  
2010  
2011  
2012  
2013  
2014  
2015  
2016  
Code  
X
Y
Z
A
B
C
D
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
1 of 6  
www.diodes.com  
March 2014  
© Diodes Incorporated  
DMN2013UFX  
Document number: DS36657 Rev. 2 - 2  

与DMN2013UFX相关器件

型号 品牌 获取价格 描述 数据表
DMN2013UFX_15 DIODES

获取价格

Dual N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2013UFX-7 DIODES

获取价格

Low On-Resistance
DMN2014LHAB DIODES

获取价格

Low On-Resistance
DMN2014LHAB_15 DIODES

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2014LHAB-13 DIODES

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2014LHAB-7 DIODES

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2015UFDE DIODES

获取价格

20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2015UFDE-13 DIODES

获取价格

20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2015UFDE-7 DIODES

获取价格

20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2015UFDF DIODES

获取价格

20V N-CHANNEL ENHANCEMENT MODE MOSFET