Datasheet > DMN2012UCA6

DMN2012UCA6

更新时间： 2023-12-06 20:03:34

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	452K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN2012UCA6 数据手册

DMN2012UCA6

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features



CSP with Footprint 2.70mm × 1.81mm

I_{S Max}

BV_SSS

R_{SS(ON) Typ}

7.4mΩ @ V_GS= 3.8V

T_A= +25°C

Height = 0.21mm for Low Profile

ESD Protection of Gate

24V

13.0A

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

For automotive applications requiring specific change control

(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and

manufactured in IATF 16949 certified facilities), please

https://www.diodes.com/quality/product-definitions/

Description

This new generation MOSFET is designed to minimize the on-state

resistance (R_SS(ON)) and yet maintain superior switching performance,

making it ideal for high efficiency power management applications.

Applications



Battery Management

Load Switch

Battery Protection

Mechanical Data



Case: X3-DSN2718-6

Terminal Connections: See Diagram Below

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish — NiPdAu or NiAu. Solderable per MIL-STD-

202, Method 208



Weight: 0.0026 grams (Approximate)

X3-DSN2718-6

ESD PROTECTED

Top View

Equivalent Circuit

Ordering Information (Note 4)

Part Number

Case

Packaging

DMN2012UCA6-7

X3-DSN2718-6

3000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

M3 = Product Type Marking Code

YM = Date Code Marking

Y or Y = Year (ex: G = 2019)

M or M = Month (ex: 9 = September)

Date Code Key

Year

2018

2019

2020

2021

2022

2023

2024

2025

2026

Code

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1 of 7

www.diodes.com

December 2019

DMN2012UCA6

Document number: DS39145 Rev. 3 - 2

12 3 4 5 6 7

中文翻译

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与DMN2012UCA6相关器件

型号	品牌	获取价格	描述	数据表
DMN2013UFDE	DIODES	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2013UFDE_15	DIODES	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2013UFDE-13	DIODES	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2013UFDE-7	DIODES	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2013UFDEQ	DIODES	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2013UFDEQ-13	DIODES	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2013UFDEQ-7	DIODES	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2013UFX	DIODES	获取价格	Low On-Resistance
DMN2013UFX_15	DIODES	获取价格	Dual N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2013UFX-7	DIODES	获取价格	Low On-Resistance

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