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DMN2005LPK-7 PDF预览

DMN2005LPK-7

更新时间: 2024-02-18 03:49:22
品牌 Logo 应用领域
美台 - DIODES 晶体小信号场效应晶体管开关
页数 文件大小 规格书
4页 127K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN2005LPK-7 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:ActiveReach Compliance Code:compliant
风险等级:5.6Is Samacsys:N
配置:Single最大漏极电流 (Abs) (ID):0.44 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e4
湿度敏感等级:1最高工作温度:150 °C
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.45 W子类别:FET General Purpose Power
表面贴装:YES端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
处于峰值回流温度下的最长时间:40Base Number Matches:1

DMN2005LPK-7 数据手册

 浏览型号DMN2005LPK-7的Datasheet PDF文件第2页浏览型号DMN2005LPK-7的Datasheet PDF文件第3页浏览型号DMN2005LPK-7的Datasheet PDF文件第4页 
DMN2005LPK  
N-CHANNEL ENHANCEMENT MODE  
FIELD EFFECT TRANSISTOR  
Lead-free Green  
EVELOPMENT  
D
Features  
UNDER  
·
·
·
·
·
·
·
·
Low On-Resistance  
Low Gate Threshold Voltage  
Fast Switching Speed  
DFN1006-3  
Dim Min Max  
G
H
Low Input/Output Leakage  
Typ  
Ultra-Small Surface Mount Package  
Lead Free By Design/RoHS Compliant (Note 2)  
"Green" Device (Note 4)  
A
0.95 1.075 1.00  
0.55 0.675 0.60  
B
C
D
G
H
K
L
A
0.45  
0.20  
0.47  
0
0.55  
0.30  
0.53  
0.05  
0.20  
0.30  
¾
0.50  
0.25  
0.50  
0.03  
0.15  
0.25  
0.35  
0.40  
ESD Protected Gate  
K
C
M
B
Mechanical Data  
N
L
D
·
·
Case: DFN1006-3  
0.10  
0.20  
¾
Case Material: Molded Plastic, “Green” Molding  
Compound. UL Flammability Classification Rating  
94V-0  
M
N
¾
¾
G
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals Connections: See Diagram  
All Dimensions in mm  
D
Terminals: Finish ¾ Matte Tin annealed over Copper  
S
leadframe. Solderable per MIL-STD-202, Method 208  
TOP VIEW  
·
·
Marking: See Last Page  
Ordering & Date Code Information: See Last Page  
Drain  
Body  
Diode  
Gate  
Gate  
Protection  
Diode  
ESD protected  
Source  
EQUIVALENT CIRCUIT  
Maximum Ratings @ TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
Value  
20  
Units  
VDSS  
VGSS  
V
V
Gate-Source Voltage  
8
200  
250  
Continuous  
Pulsed (Note 3)  
ID  
mA  
Drain Current per element (Note 1)  
Pd  
Total Power Dissipation (Note 1)  
200  
625  
mW  
°C/W  
°C  
RqJA  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +150  
Note:  
1. Device mounted on FR-4 PCB.  
2. No purposefully added lead.  
3. Pulse width £10mS, Duty Cycle £1%.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
DS30836 Rev. 3 - 1  
1 of 4  
DMN2005LPK  
www.diodes.com  
ã Diodes Incorporated  

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