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DMN2005LP4K-7 PDF预览

DMN2005LP4K-7

更新时间: 2024-09-19 03:30:07
品牌 Logo 应用领域
美台 - DIODES 晶体小信号场效应晶体管开关PC
页数 文件大小 规格书
4页 237K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN2005LP4K-7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DFN
包装说明:GREEN, ULTRA SMALL, PLASTIC, DFN1006H4-3, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.56Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:1029013
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:OtherSamacsys Footprint Name:DMN2005LP4K-7-4
Samacsys Released Date:2020-02-20 11:12:00Is Samacsys:N
其他特性:HIGH RELIABILITY外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):0.2 A最大漏极电流 (ID):0.2 A
最大漏源导通电阻:3.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PBCC-N3JESD-609代码:e4
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:FET General Purpose Powers表面贴装:YES
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DMN2005LP4K-7 数据手册

 浏览型号DMN2005LP4K-7的Datasheet PDF文件第2页浏览型号DMN2005LP4K-7的Datasheet PDF文件第3页浏览型号DMN2005LP4K-7的Datasheet PDF文件第4页 
SPICE MODEL: DMN2005LP4K  
DMN2005LP4K  
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Features  
Low On-Resistance  
Very Low Gate Threshold Voltage, 0.9V Max.  
Fast Switching Speed  
DFN1006H4-3  
Dim  
A
Min  
Max  
Typ  
Low Input/Output Leakage  
0.95 1.075 1.00  
0.55 0.675 0.60  
0.45 0.55 0.50  
0.20 0.30 0.25  
ESD protected  
Ultra-Small Surface Mount Package  
Lead Free By Design/RoHS Compliant (Note 2)  
"Green" Device (Note 4)  
ESD Protected Gate  
Ultra Low Profile Package  
B
C
S
D
D
G
G
H
0
0.40  
Mechanical Data  
TOP VIEW  
0.05 0.02  
Case: DFN1006H4-3  
K
0.10 0.20 0.15  
0.20 0.30 0.25  
Case Material: Molded Plastic, “Green” Molding  
Compound. UL Flammability Classification Rating  
94V-0  
L
G
H
M
N
0.35  
0.40  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
Terminals: Finish NiPdAu annealed over Copper  
leadframe. Solderable per MIL-STD-202, Method 208  
SIDE VIEW  
A
All Dimensions in mm  
Marking: See Page 4  
Ordering & Date Code Information: See Page 4  
Weight: 0.001 grams  
Drain  
K
M
C
B
Body  
Diode  
Gate  
N
L
D
Gate  
Protection  
Diode  
Source  
BOTTOM VIEW  
EQUIVALENT CIRCUIT  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
Value  
20  
Unit  
V
V
Gate-Source Voltage  
VGSS  
±10  
Drain Current per element (Note 1)  
Continuous  
Pulsed (Note 3)  
200  
250  
ID  
mA  
Total Power Dissipation (Note 1)  
Pd  
200  
mW  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
625  
°C/W  
°C  
RθJA  
-65 to +150  
T , TSTG  
j
Notes:  
1. Device mounted on FR-4 PCB.  
2. No purposefully added lead.  
3. Pulse width 10μS, Duty Cycle 1%.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
DS30799 Rev. 2 - 2  
1 of 4  
DMN2005LP4K  
© Diodes Incorporated  
www.diodes.com  

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