Datasheet > DMN2005LP4K_09

DMN2005LP4K_09

更新时间： 2024-11-25 09:54:11

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
4页	161K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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DMN2005LP4K_09 数据手册

DMN2005LP4K

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Features

Mechanical Data

•

Low On-Resistance

Very Low Gate Threshold Voltage, 0.9V Max.

Fast Switching Speed

•

Case: DFN1006H4-3

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminal Connections: See Diagram

Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

Marking Information: See Page 4

Ordering Information: See Page 4

Weight: 0.001 grams

•

Low Input/Output Leakage

Ultra-Small Surface Mount Package

Lead, Halogen and Antimony Free, RoHS Compliant (Note 2)

"Green" Device (Note 4)

ESD Protected Gate

Ultra Low Profile Package

•

Qualified to AEC-Q101 Standards for High Reliability

Drain

DFN1006H4-3

Body

Diode

Gate

Protection

Diode

Source

TOP VIEW

ESD protected

BOTTOM VIEW

Pin Out Configuration

EQUIVALENT CIRCUIT

Maximum Ratings ^@T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-Source Voltage

V_GSS

±10

Drain Current per element (Note 1)

Continuous

Pulsed (Note 3)

200

250

I_D

Thermal Characteristics @T_A= 25°C unless otherwise specified

Characteristic

Total Power Dissipation (Note 1)

Symbol

P_D

Value

Unit

200

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

625

°C/W

°C

R_θ

-65 to +150

T_J, T_STG

Notes:

1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

1 of 4

www.diodes.com

March 2009

DMN2005LP4K

Document number: DS30799 Rev. 4 - 2

12 3 4

中文翻译

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