Datasheet > DMN2004K_10

DMN2004K_10

更新时间： 2022-10-27 10:24:06

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
6页	187K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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DMN2004K_10 数据手册

DMN2004K

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Product Summary

Features and Benefits

•

Low On-Resistance: R_DS(ON)= 550_(max)mΩ @ V_GS= 4.5V

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

ESD Protected up to 2KV

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

I_D

V_(BR)DSS

R_DS(ON)

T_A= 25°C

630mA

410mA

0.55Ω @ V_GS= 4.5V

0.9Ω @ V_GS= 1.8V

20V

Qualified to AEC-Q101 standards for High Reliability

Description and Applications

This new generation MOSFET has been designed to minimize the on-

state resistance (R_DS(on)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Mechanical Data

•

Case: SOT-23

Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

•

DC-DC Converters

Power management functions

•

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

•

Terminal Connections: See Diagram

Weight: 0.008 grams (approximate)

Drain

SOT-23

Gate

Protection

Diode

Source

Top View

Equivalent Circuit

Top View

ESD PROTECTED TO 2kV

Ordering Information (Note 3)

Part Number

DMN2004K-7

Case

SOT-23

Packaging

3000/Tape & Reel

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

NAB = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: T = 2006)

NAB

M = Month (ex: 9 = September)

Date Code Key

Year

2006

2007

2008

2009

2010

2011

2012

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 6

www.diodes.com

November 2010

DMN2004K

Document number: DS30938 Rev. 5 - 2

12 3 4 5 6

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