Datasheet > DMN2004WKQ

DMN2004WKQ

更新时间： 2024-11-26 14:54:27

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	545K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN2004WKQ 数据手册

DMN2004WKQ

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits

I_D



Low On-Resistance: R_DS(ON)

BV_DSS

R_DS(ON)max

550 mΩ @ V_GS= 4.5V

T_C= +25°C

0.54 mA

Low Gate Threshold Voltage

20V

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

ESD Protected

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 standards for High Reliability

PPAP Capable (Note 4)

Description and Applications

Mechanical Data

This MOSFET is designed to meet the stringent requirements of

Automotive applications. It is qualified to AEC-Q101, supported by a

PPAP and is ideal for use in:



Case: SOT-323

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Finish - Matte Tin Annealed over Alloy 42 Leadframe.

Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram



Engine Management Systems

DC-DC Converters

Body Control Electronics



Weight: 0.006 grams (Approximate)

SOT-323

ESD protected Gate

TOP VIEW

Gate Protection

Diode

TOP VIEW

Internal Schematic

Ordering Information (Note 5)

Part Number

DMN2004WKQ-7

Case

SOT-323

Packaging

3,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

NAB = Product Type Marking Code

YM = Date Code Marking

Y or ꢀ = Year (ex: D = 2016)

M = Month (ex: 9 = September)

NAB

Date Code Key

Year

2016

2017

2018

2019

2020

2021

2022

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 6

www.diodes.com

August 2016

DMN2004WKQ

Document number: DS39166 Rev. 1 - 2

12 3 4 5 6

中文翻译

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DMN2005DLP4K	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005DLP4K_09	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005DLP4K-7	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005K	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005K_0711	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005K-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005K-7-F	TYSEMI	获取价格	Product specification
DMN2005LP4K	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005LP4K_09	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005LP4K-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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