Datasheet > DMN2004VK_15

DMN2004VK_15

更新时间： 2024-01-18 09:22:58

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	210K
描述
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN2004VK_15 数据手册

DMN2004VK

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

Mechanical Data

•

Dual N-Channel MOSFET

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

•

Case: SOT563

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram

Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

Weight: 0.006 grams (approximate)

•

Fast Switching Speed

Ultra-Small Surface Mount Package

Lead Free By Design/RoHS Compliant (Note 1)

ESD Protected Gate up to 2kV

"Green" Device (Note 2)

•

Qualified to AEC-Q101 Standards for High Reliability

G₁

S₁

D₂

SOT563

G₂

S₂

D₁

ESD protected up to 2kV

Top View

Bottom View

Top View

Internal Schematic

Ordering Information (Note 3)

Part Number

DMN2004VK-7

DMN2004VK-13

Case

SOT563

Packaging

3000/Tape & Reel

10000/Tape & Reel

Notes:

1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

NAB = Marking Code

YM = Date Code Marking

Y = Year (ex: T = 2006)

M = Month (ex: 9 = September)

NAB

Date Code Key

Year

2006

2007

2008

2009

2010

2011

2012

2013

2014

2015

2016

2017

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 6

www.diodes.com

March 2012

DMN2004VK

Document number: DS30865 Rev. 5 - 2

12 3 4 5 6

中文翻译

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