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DMN2004WK_09

更新时间： 2024-11-25 09:54:11
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美台 - DIODES /
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N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN2004WK_09 数据手册

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DMN2004WK  
N-CHANNEL ENHANCEMENT MODE MOSFET  
Features  
Mechanical Data  
•
•
Case: SOT-323  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Finish − Matte Tin annealed over Alloy 42 leadframe.  
Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.006 grams (approximate)  
•
•
•
•
•
•
•
•
•
Low On-Resistance: RDS(ON)  
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
Lead Free By Design/RoHS Compliant (Note 2)  
ESD Protected up to 2KV  
"Green" Device (Note 4)  
Qualified to AEC-Q101 standards for High Reliability  
•
•
•
•
•
•
Drain  
SOT-323  
D
Gate  
Gate  
Protection  
Diode  
G
S
Source  
TOP VIEW  
ESD protected up to 2kV  
EQUIVALENT CIRCUIT  
TOP VIEW  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
Value  
20  
Units  
V
V
Gate-Source Voltage  
±8  
VGSS  
T
= 25°C  
= 85°C  
Drain Current (Note 1)  
Steady  
State  
540  
390  
A
mA  
A
ID  
T
A
Pulsed Drain Current (Note 3)  
1.5  
IDM  
Thermal Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
PD  
Rθ  
Value  
200  
Units  
mW  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
625  
JA  
-55 to +150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 5)  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
20  
⎯
⎯
V
BVDSS  
IDSS  
IGSS  
⎯
⎯
⎯
⎯
1
VGS = 0V, ID = 10μA  
VDS = 16V, VGS = 0V  
VGS = ±4.5V, VDS = 0V  
μA  
μA  
Gate-Source Leakage  
±1  
ON CHARACTERISTICS (Note 5)  
Gate Threshold Voltage  
0.5  
1.0  
V
VGS(th)  
⎯
VDS = VGS, ID = 250μA  
VGS = 4.5V, ID = 540mA  
VGS = 2.5V, ID = 500mA  
VGS = 1.8V, ID = 350mA  
VDS =10V, ID = 0.2A  
0.4  
0.5  
0.7  
0.55  
0.70  
0.9  
Static Drain-Source On-Resistance  
RDS (ON)  
⎯
Ω
Forward Transfer Admittance  
Diode Forward Voltage (Note 5)  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
200  
0.5  
ms  
V
|Yfs|  
VSD  
⎯
⎯
⎯
1.4  
VGS = 0V, IS = 115mA  
150  
25  
20  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
⎯
⎯
⎯
⎯
⎯
⎯
VDS = 16V, VGS = 0V  
f = 1.0MHz  
Notes:  
1. Device mounted on FR-4 PCB.  
2. No purposefully added lead.  
3. Pulse width ≤10μS, Duty Cycle ≤1%.  
4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Short duration pulse test used to minimize self-heating effect.  
1 of 4  
www.diodes.com  
January 2009  
© Diodes Incorporated  
DMN2004WK  
Document number: DS30934 Rev. 4 - 2  
1234

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