Datasheet > DMN2004VK

DMN2004VK

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	145K
描述
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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数据手册

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DMN2004VK 数据手册

SPICE MODEL: DMN2004VK

DMN2004VK

^{Lead-free Green}DUAL N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT TRANSISTOR

Features

Dual N-Channel MOSFET

Low On-Resistance

SOT-563

Low Gate Threshold Voltage

Dim Min

Max

0.30

1.25

1.70

0.50

1.10

1.70

0.60

0.30

0.18

Typ

0.25

1.20

1.60

Low Input Capacitance

0.15

1.10

1.55

Fast Switching Speed

Low Input/Output Leakage

Ultra-Small Surface Mount Package

Lead Free By Design/RoHS Compliant (Note 2)

ESD Protected Gate up to 2 kV

"Green" Device (Note 4)

0.90

1.50

0.56

0.10

1.00

1.60

0.60

0.20

0.11

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

All Dimensions in mm

Case: SOT-563

Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

G₁

S₁

D₂

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals Connections: See Diagram

Terminals: Finish - Matte Tin annealed over Copper lead

frame. Solderable per MIL-STD-202, Method 208

Marking: See Page 2

Ordering & Date Code Information: See Page 2

Weight: 0.006 grams (approximate)

ESD protected up to 2kV

S₂

G₂

D₁

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

V_DSS

Value

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Note 1)

V_GSS

±8

T_A= 25°C

_A= 85°C

540

390

Steady

State

I_D

I_DM

P_d

Pulsed Drain Current (Note 3)

1.5

250

Total Power Dissipation (Note 1)

°C/W

°C

R_qJA

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

500

T_j, T_STG

-65 to +150

Note:

1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width £10mS, Duty Cycle £1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

DS30865 Rev. 2 - 2

1 of 4

DMN2004VK

www.diodes.com

ã Diodes Incorporated

12 3 4

中文翻译

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