Datasheet > DMN16M8UCA6

DMN16M8UCA6

更新时间： 2023-12-06 20:02:38

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	703K
描述
N-Channel Enhancement Mode MOSFET

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中文翻译

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数据手册

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DMN16M8UCA6 数据手册

DMN16M8UCA6

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features



CSP with Footprint 2.70mm × 1.81mm

I_{S Max}

BV_SSS

R_{SS(ON) Typ}

4.3mΩ @ V_GS= 3.8V

Height = 0.21mm for Low Profile

T_A= +25°C

ESD Protection of Gate

12V

15.5A

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

For automotive applications requiring specific change control

(i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable,

and manufactured in IATF 16949 certified facilities), please

https://www.diodes.com/quality/product-definitions/

Description

This new generation MOSFET is designed to minimize the on-state

resistance (R_SS(ON)) yet maintain superior switching performance,

making it ideal for high-efficiency power-management applications.

Mechanical Data

Applications



Package: X3-DSN2718-6



Battery managements

Load switches

Terminal Connections: See Diagram Below

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish — NiAu. Solderable per MIL-STD-202, Method

208

Battery protections



Weight: 0.0026 grams (Approximate)

X3-DSN2718-6

ESD PROTECTED

Equivalent Circuit

Top View

Ordering Information (Note 4)

Packing

Part Number

Package

Qty.

Carrier

Tape & Reel

DMN16M8UCA6-7

X3-DSN2718-6

3000

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See http://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

Y9 = Product Type Marking Code

YW = Date Code Marking

Y or Y = Year (ex: 3 = 2023)

W or W = Week (ex: a = week 27; z represents week 52 and 53)

Date Code Key

Year

2022

2023

2024

2025

2026

2027

2028

2029

2030

2031

2032

2033

Code

Week

Code

1-26

27-52

a-z

A-Z

1 of 7

www.diodes.com

March 2023

DMN16M8UCA6

Document number: DS44543 Rev. 3 - 2

12 3 4 5 6 7

中文翻译

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与DMN16M8UCA6相关器件

型号	品牌	获取价格	描述	数据表
DMN16M9UCA6	DIODES	获取价格	12V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2.4	ETC	获取价格	TRANSISTOR \| MOSFET \| MATCHED PAIR \| N-CHANNEL \| CHIP
DMN2004DMK	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004DMK_0711	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004DMK-7	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004DWK	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004DWK_0711	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004DWK-7	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004DWKQ-7	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.54A I(D), 20V, 2-Element, N-Channel, Silicon, Meta
DMN2004K	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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