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DMN2004DMK_0711

更新时间： 2022-10-27 10:22:53
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 286K
描述
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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DMN2004DMK_0711 数据手册

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DMN2004DMK  
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Features  
Mechanical Data  
•
•
•
•
•
•
•
•
•
•
•
Dual N-Channel MOSFET  
Low On-Resistance  
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
•
•
Case: SOT-26  
Case Material: Molded Plastic, “Green” Molding  
Compound. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
Terminals: Finish ⎯ Matte Tin annealed over Copper  
leadframe. Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.015 grams (approximate)  
•
•
•
Low Input/Output Leakage  
Ultra-Small Surface Mount Package  
Lead Free By Design/RoHS Compliant (Note 2)  
ESD Protected up to 2KV  
"Green" Device (Note 4)  
Qualified to AEC-Q101 standards for High Reliability  
•
•
•
SOT-26  
G1  
S1  
D2  
G2  
S2  
D1  
ESD protected up 2kV  
TOP VIEW  
TOP VIEW  
Internal Schematic  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
Value  
20  
Units  
V
V
Gate-Source Voltage  
±8  
VGSS  
T
T
= 25°C  
= 85°C  
Drain Current (Note 1)  
Steady  
State  
540  
390  
A
mA  
A
ID  
A
Pulsed Drain Current (Note 3)  
1.5  
IDM  
Thermal Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
Value  
225  
Units  
mW  
°C/W  
°C  
Pd  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
556  
Rθ  
JA  
-65 to +150  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 5)  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Source Leakage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
20  
⎯
⎯
V
BVDSS  
IDSS  
IGSS  
⎯
⎯
⎯
⎯
1
VGS = 0V, ID = 10μA  
VDS = 16V, VGS = 0V  
VGS = ±4.5V, VDS = 0V  
μA  
μA  
±1  
ON CHARACTERISTICS (Note 5)  
Gate Threshold Voltage  
0.5  
1.0  
V
VGS(th)  
⎯
VDS = VGS, ID = 250μA  
VGS = 4.5V, ID = 540mA  
VGS = 2.5V, ID = 500mA  
VGS = 1.8V, ID = 350mA  
VDS =10V, ID = 0.2A  
0.4  
0.5  
0.7  
0.55  
0.70  
0.9  
Static Drain-Source On-Resistance  
RDS (ON)  
⎯
Ω
Forward Transfer Admittance  
Diode Forward Voltage (Note 5)  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
200  
0.5  
ms  
V
|Yfs|  
VSD  
⎯
⎯
⎯
1.4  
V
GS = 0V, IS = 115mA  
150  
25  
20  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
⎯
⎯
⎯
⎯
⎯
⎯
VDS = 16V, VGS = 0V  
f = 1.0MHz  
Notes:  
1. Device mounted on FR-4 PCB.  
2. No purposefully added lead.  
3. Pulse width ≤10μS, Duty Cycle ≤1%.  
4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Short duration pulse test used to minimize self-heating effect.  
1 of 4  
www.diodes.com  
November 2007  
© Diodes Incorporated  
DMN2004DMK  
Document number: DS30937 Rev. 3 - 2  
1234

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