Datasheet > DMN2004DWK

DMN2004DWK

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	146K
描述
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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数据手册

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DMN2004DWK 数据手册

SPICE MODEL: DMN2004DWK

DMN2004DWK

DUAL N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT TRANSISTOR

Lead-free Green

Features

Dual N-Channel MOSFET

SOT-363

Low On-Resistance

Dim

Min

0.10

1.15

2.00

Max

0.30

1.35

2.20

Low Gate Threshold Voltage

Low Input Capacitance

D₂

G₁

S₁

Fast Switching Speed

Low Input/Output Leakage

0.65 Nominal

Ultra-Small Surface Mount Package

Lead Free By Design/RoHS Compliant (Note 2)

ESD Protected up to 2KV

D₁

S₂

G₂

0.30

1.±0

0.40

2.20

0.10

1.00

0.40

0.25

±°

"Green" Device (Note 4)

Qualified to AEC-Q101 standards for High Reliability

0.90

0.25

0.10

0°

Mechanical Data

Case: SOT-363

Case Material: Molded Plastic, “Green” Molding

All Dimensions in mm

Compound. UL Flammability Classification Rating 94V-0

G₁

S₁

D₂

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals Connections: See Diagram

Terminals: Finish - Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

Marking: See Page 2

ESD protected up to 2KV

Ordering & Date Code Information: See Page 2

Weight: 0.006 grams (approximate)

S₂

G₂

D₁

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

V_DSS

Value

Units

±±

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Note 1)

V_GSS

Steady

State

T_A= 25°C

_A= ±5°C

540

390

I_D

I_DM

P_d

Pulsed Drain Current (Note 3)

1.5

200

Total Power Dissipation (Note 1)

°C/W

°C

R_qJA

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

625

T_j, T_STG

-65 to +150

Note:

1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width £10mS, Duty Cycle £1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

DS30935 Rev. 2 - 2

1 of 4

DMN2004DWK

www.diodes.com

ã Diodes Incorporated

12 3 4

中文翻译

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