DMN16M9UCA6
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
CSP with Footprint 2.70mm × 1.81mm
Height = 0.21mm for Low Profile
IS
BVSSS
RSS(ON) MAX
TA = +25°C
ESD Protection of Gate
16.6A
12.1A
6.5mΩ @ VGS = 4.5V
11.4mΩ @ VGS = 2.5V
12V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
Mechanical Data
Case: X3-DSN2718-6 (Type B)
This new generation MOSFET is designed to minimize the on-state
resistance (RSS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Terminal Connections: See Diagram Below
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — NiPdAu. Solderable per MIL-STD-202,
Method 208 e4
Applications
Battery Management
Load Switch
Battery Protection
X3-DSN2718-6 (Type B)
G1
G2
ESD PROTECTED
Top View
S1
S2
Equivalent Circuit
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN16M9UCA6-7
X3-DSN2718-6 (Type B)
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
M2 / MC = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: E = 2017)
M or M = Month (ex: 9 = September)
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
Code
C
D
E
F
G
H
I
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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www.diodes.com
July 2017
© Diodes Incorporated
DMN16M9UCA6
Document number: DS39737 Rev. 2 - 2