Datasheet > CZT5401

CZT5401

更新时间： 2024-11-09 09:11:47

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	512K
描述
Epitaxial Planar Transistor

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中文翻译

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CZT5401 数据手册

CZT5401

PNP Transistor

Elektronische Bauelemente

Epitaxial Planar Transistor

RoHS Compliant Product

SOT-223

Description

The CZT5401 is designed for general

purpose applications requiring high

breakdown voltages.

REF.

Min.

6.70

2.90

0.02

0̓

Max.

7.30

3.10

0.10

10̓

Min.

13̓TYP.

2.30 REF.

Max.

5 4 0 1

6.30

6.70

3.70

1.80

Date Code

6.30

3.30

1.40

0.60

0.25

0.80

0.35

MAXIMUM RATINGS* (T_amb=25^oC, unless otherwise specified)

Symbol

Parameter

Value

Units

V_CBO

V^CEO

V^EBO

Collector-Base Voltage

-160

-150

Collector-Emitter Voltage

Emitter-Base Voltage

-5

-600

Collector Current-Continuous

Total Power Dissipation

1.5

Storage Temperature

-55~-150

Junction and

TJ,

Tstg

ELECTRICAL CHARACTERISTICS Tamb=25^oC unlessotherwise specified

Parameter

Test conditions

Symbol

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Ic=-100uA,IE=0

I^C= -1mA,IB=0

I^E= -10uA,IC=0

V(BR)_CBO

V(BR)_CEO

-160

-150

-5

Emitter-base breakdown voltage

Collector cut-off current

V(BR)_EBO

I^CBO

_CB= -120V,IE=0

_EB=-3V,IC=0

V_CE= -5V, I_C= -1mA

_CE=-5V, I_C= -10mA

-50

I_EBO

Emitter cut-off current

h^FE

DC current gain

160

400

V_CE= -5V, I_C= -50mA

I^C=-10mA,I^B= -1mA

I^C=-50mA,I^B= -5mA

I^C=-10mA,I^B= -1mA

50mA,

V_CE(sat)₁

V_CE(sat)₂

V_BE(sat)₁

V_BE(sat)₂

-200

-500

-1

Collector-emitter saturation voltage

Base-emitter saturation voltage

I^C=-

I^B= -5mA

-1

V_CE=-10V,IC=-10mA,

f = 100MHz

Transition frequency

100

300

MHz

Collector output capacitance

Cob

_CB=-10V, f=1MHz,IE=0

CLASSIFICATION OF hFE

Rank

Range

80-200

100-240

160-400

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

中文翻译

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