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CZT5551HCBKPBFREE

更新时间： 2024-09-24 13:07:15

品牌	Logo	应用领域
CENTRAL		晶体晶体管功率双极晶体管光电二极管放大器
页数	文件大小	规格书
2页	96K
描述
Transistor,

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中文翻译

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技术参数
数据手册

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CZT5551HCBKPBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
最大集电极电流 (IC)：	1 A	配置：	Single
最小直流电流增益 (hFE)：	80	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	2 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	100 MHz	Base Number Matches：	1

CZT5551HCBKPBFREE 数据手册

Ce n t r a l

CZT5551

S e m ic o n d u c t o r Co r p .

NPN SILICON TRANSISTOR

DESCRIPTION:

TheCENTRALSEMICONDUCTORCZT5551

typeisanNPNsilicontransistormanufactured

by the epitaxial planar process, epoxy molded

inasurfacemountpackage, designedforhigh

voltage amplifier applications.

SOT-223 CASE

MAXIMUM RATINGS (T =25 C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

180

160

6.0

600

2.0

CBO

CEO

EBO

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

-65 to +150

62.5

C/W

J stg

ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=120V

=120V, T =100 C

=4.0V

µA

CBO

EBO

CBO

CEO

EBO

CE(SAT)

BE(SAT)

I =100µA

180

160

6.0

I =1.0mA

I =10µA

I =10mA, I =1.0mA

0.15

0.20

1.00

I =50mA, I =5.0mA

I =10mA, I =1.0mA

I =50mA, I =5.0mA

=5.0V, I =1.0mA

=5.0V, I =10mA

250

=5.0V, I =50mA

316

中文翻译

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