Datasheet > CZT5551

CZT5551

更新时间： 2024-09-24 06:51:55

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管光电二极管放大器
页数	文件大小	规格书
1页	36K
描述
NPN Silicon Transistor

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中文翻译

获取价格

数据手册

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CZT5551 数据手册

SMD Type

Transistors

NPN Silicon Transistor

CZT5551

SOT-223

Unit: mm

+0.2

3.50

-0.2

+0.2

6.50

-0.2

+0.2

0.90

-0.2

+0.1

3.00

-0.1

Features

+0.3

7.00

-0.3

1 Base

2 Collector

+0.1

0.70

-0.1

3 Emitter

2.9

4.6

4 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

180

Unit

160

Collector Current

600

Power Dissipation

P^D

Operating and Storage Junction Temperature

Thermal Resistance

T^J,Tstg

ÈJA

-65 to 150

62.5

Electrical Characteristics Ta = 25

Symbol

I^CBO

Testconditons

Min

Max

Unit

VCB=120V

I^CBO

VCB=120V, TA=100

VEB=4.0V

IEBO

B^VCBO

B^VCEO

B^VEBO

V^CE(SAT)

V^BE(SAT)

IC=100ìA

180

160

6.0

IC=1.0mA

IE=10ìA

IC=10mA, IB=1.0mA

IC=50mA, IB=5.0mA

IC=10mA, IB=1.0mA

IC=50mA, IB=5.0mA

V^CE=5.0V, IC=1.0mA

V^CE=5.0V, IC=10mA

V^CE=5.0V, IC=50mA

VCE=10V, IC=10mA, f=100MHz

VCB=10V, IE=0, f=1.0MHz

VEB=0.5V, IC=0, f=1.0MHz

V^CE=10V, IC=1.0mA, f=1.0kHz

0.15

0.20

1.00

h^FE

250

f^T

100

300

6.0

MHz

C^ob

C^ib

hfe

200

VCE=5.0V, IC=200ìA, RS=10

Ù,f=10Hz to 15.7kHz

N^F

8.0

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