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CZT5401_10 PDF预览

CZT5401_10

更新时间: 2024-09-24 09:11:47
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 530K
描述
SURFACE MOUNT PNP SILICON TRANSISTOR

CZT5401_10 数据手册

 浏览型号CZT5401_10的Datasheet PDF文件第2页 
CZT5401  
www.centralsemi.com  
SURFACE MOUNT  
PNP SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZT5401 is a PNP  
silicon transistor manufactured by the epitaxial planar  
process, epoxy molded in a surface mount package,  
designed for high voltage amplifier applications.  
MARKING: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
V
V
V
160  
150  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
5.0  
V
Continuous Collector Current  
Power Dissipation  
I
600  
mA  
W
C
P
2.0  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T
T
-65 to +150  
62.5  
°C  
J, stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
50  
UNITS  
nA  
μA  
nA  
V
I
I
I
V
V
V
=120V  
CBO  
CBO  
EBO  
CB  
CB  
EB  
=120V, T =100°C  
A
=3.0V  
50  
50  
BV  
BV  
BV  
I =100μA  
160  
150  
5.0  
CBO  
CEO  
C
I =1.0mA  
V
C
I =10μA  
V
EBO  
E
V
V
V
V
I =10mA, I =1.0mA  
0.2  
0.5  
1.0  
1.0  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
B
I =50mA, I =5.0mA  
V
C
B
I =10mA, I =1.0mA  
V
C
B
I =50mA, I =5.0mA  
V
C
B
h
h
h
V
=5.0V, I =1.0mA  
50  
60  
CE  
CE  
CE  
CE  
CB  
CE  
CE  
C
V
V
V
V
V
V
=5.0V, I =10mA  
240  
FE  
C
=5.0V, I =50mA  
50  
FE  
C
f
=10V, I =10mA, f=100MHz  
100  
300  
6.0  
MHz  
pF  
T
C
C
=10V, I =0, f=1.0MHz  
ob  
E
h
=10V, I =1.0mA, f=1.0kHz  
40  
200  
fe  
C
N
=5.0V, I =250μA, R =1.0kΩ,  
F
C S  
f=10Hz to 15.7kHz  
8.0  
dB  
R6 (1-March 2010)  

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