是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 最大集电极电流 (IC): | 0.6 A |
配置: | Single | 最小直流电流增益 (hFE): | 100 |
最高工作温度: | 150 °C | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 2 W | 子类别: | Other Transistors |
表面贴装: | YES | 标称过渡频率 (fT): | 100 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CZT5401ETRLEADFREE | CENTRAL |
获取价格 |
Transistor | |
CZT5401G | CENTRAL |
获取价格 |
Power Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy | |
CZT5551 | TYSEMI |
获取价格 |
Absolute Maximum Ratings Ta = 25 | |
CZT5551 | CENTRAL |
获取价格 |
NPN SILICON TRANSISTOR | |
CZT5551 | SECOS |
获取价格 |
Epitaxial Planar Transistor | |
CZT5551 | KEXIN |
获取价格 |
NPN Silicon Transistor | |
CZT5551 | CJ |
获取价格 |
SOT-223 | |
CZT5551_10 | CENTRAL |
获取价格 |
SURFACE MOUNT NPN SILICON TRANSISTOR | |
CZT5551BKLEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy | |
CZT5551E | CENTRAL |
获取价格 |
ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR |