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CZT5551E PDF预览

CZT5551E

更新时间: 2024-09-24 03:27:51
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 152K
描述
ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR

CZT5551E 数据手册

 浏览型号CZT5551E的Datasheet PDF文件第2页 
TM  
Central  
CZT5551E  
Semiconductor Corp.  
ENHANCED SPECIFICATION  
SURFACE MOUNT  
NPN SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZT5551E  
is an NPN Silicon Transistor, packaged in an  
SOT-223 case, designed for general purpose  
amplifier applications requiring high breakdown  
voltage.  
MARKING CODE: FULL PART NUMBER  
FEATURES:  
SOT-223 CASE  
• High Collector Breakdown Voltage 250V  
• Low Leakage Current 50nA Max  
• Low Saturation Voltage 100mV Max @ 50mA  
• Complementary Device CZT5401E  
• SOT-223 Surface Mount Package  
APPLICATIONS:  
• General purpose switching and amplification  
Telephone applications  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
250  
220  
6.0  
V
CBO  
V
V
CEO  
V
V
EBO  
I
600  
2.0  
mA  
W
C
Power Dissipation  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
J
-65 to +150  
62.5  
°C  
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
V
V
V
=120V  
50  
50  
50  
nA  
μA  
nA  
V
CBO  
CB  
CB  
EB  
I
=120V, T =100°C  
A
=4.0V  
CBO  
I
EBO  
BV  
I =100μA  
250  
220  
6.0  
CBO  
C
BV  
I =1.0mA  
V
CEO  
C
BV  
I =10μA  
V
EBO  
E
V
I =10mA, I =1.0mA  
75  
mV  
mV  
V
CE(SAT)  
C
B
V
I =50mA, I =5.0mA  
100  
1.00  
1.00  
CE(SAT)  
C
B
V
I =10mA, I =1.0mA  
BE(SAT)  
C B  
V
I =50mA, I =5.0mA  
V
BE(SAT)  
C
B
Enhanced Specification  
R0 (10-May 2006)  

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