Datasheet > CZT5551

CZT5551

更新时间： 2023-12-06 20:06:16

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	719K
描述
SOT-223

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中文翻译

获取价格

数据手册

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CZT5551 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-223(8R) Plastic-Encapsulate Transistors

SOT-223

CZT5551 TRANSISTOR (NPN)

FEATURES



High Voltage

High Voltage Amplifier Application

1. BASE

2. COLLECTOR

3. EMITTER

MARKING:

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

180

Unit

Collector-Base Voltage

Collector-Emitter Voltage

160

Emitter-Base Voltage

Collector Current

600

Collector Power Dissipation

P_C

Thermal Resistance From Junction To Ambient

Operation Junction and Storage Temperature Range

125

R_θJA

T_J,T_stg

℃/W

℃

-55~+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

180

160

Typ

Max

Unit

V_(BR)CBOI_C=0.1mA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=0.01mA,I_C=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_CBO

I_EBO

V_CB=120V,I_E=0

V_EB=4V,I_C=0

Emitter cut-off current

h_FE(1)

h_FE(2)

h_FE(3)

V_CE=5V, I_C=1mA

100

DC current gain

V_CE=5V, I_C=10mA

V_CE=5V, I_C=50mA

I_C=10mA,I_B=1mA

I_C=50mA,I_B=5mA

I_C=10mA,I_B=1mA

I_C=50mA,I_B=5mA

VCE=10V,IC=10mA, f=100MHz

V_CB=10V, I_E=0, f=1MHz

V_BE=0.5V, I_C=0, f=1MHz

300

0.15

0.2

V_CE(sat)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_BE(sat)

f_T

100

300

MHz

Transition frequency

C_ob

C_ib

Collector output capacitance

Emitter input capacitance

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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