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CY7C109BN-12ZC PDF预览

CY7C109BN-12ZC

更新时间: 2024-11-06 03:14:15
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
9页 453K
描述
128K x 8 Static RAM

CY7C109BN-12ZC 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:8 X 20 MM, TSOP1-32
针数:32Reach Compliance Code:not_compliant
ECCN代码:3A991.B.2.BHTS代码:8542.32.00.41
风险等级:5.45Is Samacsys:N
最长访问时间:12 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G32JESD-609代码:e0
长度:18.4 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP32,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):240电源:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.045 A子类别:SRAMs
最大压摆率:0.09 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:8 mmBase Number Matches:1

CY7C109BN-12ZC 数据手册

 浏览型号CY7C109BN-12ZC的Datasheet PDF文件第2页浏览型号CY7C109BN-12ZC的Datasheet PDF文件第3页浏览型号CY7C109BN-12ZC的Datasheet PDF文件第4页浏览型号CY7C109BN-12ZC的Datasheet PDF文件第5页浏览型号CY7C109BN-12ZC的Datasheet PDF文件第6页浏览型号CY7C109BN-12ZC的Datasheet PDF文件第7页 
CY7C109BN  
CY7C1009BN  
128K x 8 Static RAM  
Features  
Functional Description[1]  
• High speed  
The CY7C109BN/CY7C1009BN is a high-performance  
CMOS static RAM organized as 131,072 words by 8 bits. Easy  
memory expansion is provided by an active LOW Chip Enable  
(CE1), an active HIGH Chip Enable (CE2), an active LOW  
Output Enable (OE), and three-state drivers. Writing to the  
device is accomplished by taking Chip Enable One (CE1) and  
Write Enable (WE) inputs LOW and Chip Enable Two (CE2)  
input HIGH. Data on the eight I/O pins (I/O0 through I/O7) is  
then written into the location specified on the address pins (A0  
through A16).  
— tAA = 12 ns  
• Low active power  
— 495 mW (max. 12 ns)  
• Low CMOS standby power  
— 55 mW (max.) 4 mW  
• 2.0V Data Retention  
• Automatic power-down when deselected  
• TTL-compatible inputs and outputs  
• Easy memory expansion with CE1, CE2, and OE options  
Reading from the device is accomplished by taking Chip  
Enable One (CE1) and Output Enable (OE) LOW while forcing  
Write Enable (WE) and Chip Enable Two (CE2) HIGH. Under  
these conditions, the contents of the memory location  
specified by the address pins will appear on the I/O pins.  
The eight input/output pins (I/O0 through I/O7) are placed in a  
high-impedance state when the device is deselected (CE1  
HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or  
during a write operation (CE1 LOW, CE2 HIGH, and WE LOW).  
The CY7C109BN is available in standard 400-mil-wide SOJ  
and 32-pin TSOP type I packages. The CY7C1009BN is  
available in a 300-mil-wide SOJ package. The CY7C1009BN  
and CY7C109BN are functionally equivalent in all other  
respects.  
Logic Block Diagram  
Pin Configurations  
SOJ  
Top View  
V
NC  
32  
31  
30  
1
CC  
A
16  
A
15  
CE  
2
3
4
A
14  
2
A
12  
29  
28  
WE  
5
A
7
A
6
A
5
A
A
A
13  
8
27  
26  
6
7
9
25  
24  
23  
22  
21  
A
A
8
9
10  
11  
12  
13  
A
4
3
11  
OE  
I/O  
0
A
A
A
10  
2
1
INPUT BUFFER  
CE  
I/O  
I/O  
1
7
6
A
I/O  
0
0
I/O  
I/O  
1
20  
19  
A
0
A
1
I/O  
I/O  
GND  
I/O  
1
5
14  
15  
16  
I/O  
I/O  
2
18  
17  
4
3
2
A
2
A
4
3
A
A
A
A
A
WE  
CE  
A
1
2
32  
31  
OE  
11  
I/O  
I/O  
I/O  
I/O  
3
4
5
512 x 256 x 8  
ARRAY  
A
A
9
8
10  
5
6
3
4
5
6
7
8
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
CE  
I/O  
A
13  
7
A
7
8
I/O  
I/O  
6
5
A
2
15  
I/O  
I/O  
TSOP I  
4
3
V
Top View  
CC  
NC  
A
A
A
A
A
6
A
A
9
GND  
(not to scale)  
I/O  
10  
11  
12  
13  
14  
15  
16  
16  
2
6
7
POWER  
DOWN  
I/O  
1
COLUMN  
DECODER  
14  
12  
CE  
2
WE  
1
I/O  
0
CE  
A
0
7
I/O  
A
1
A
2
5
4
A
3
OE  
Note:  
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 001-06430 Rev. **  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised February 1, 2006  
[+] Feedback  

CY7C109BN-12ZC 替代型号

型号 品牌 替代类型 描述 数据表
CY7C109B-12ZXCT CYPRESS

功能相似

Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 8 X 20 MM, LEAD FREE, TSOP1-32
CY7C109BN-12ZXC CYPRESS

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128K x 8 Static RAM
CY7C109B-12ZXC CYPRESS

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128K x 8 Static RAM

与CY7C109BN-12ZC相关器件

型号 品牌 获取价格 描述 数据表
CY7C109BN-12ZCT CYPRESS

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CY7C109BN-12ZXC CYPRESS

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CY7C109BN-12ZXC ROCHESTER

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CY7C109BN-15VC CYPRESS

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128KX8 STANDARD SRAM, 15ns, PDSO32, 0.400 INCH, SOJ-32
CY7C109BN-15VCT CYPRESS

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Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 0.400 INCH, SOJ-32
CY7C109BN-15VI CYPRESS

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CY7C109BN-15VIT ROCHESTER

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128KX8 STANDARD SRAM, 15ns, PDSO32, 0.400 INCH, SOJ-32
CY7C109BN-15VIT CYPRESS

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Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 0.400 INCH, SOJ-32