CY7C109D
CY7C1009D
1-Mbit (128 K × 8) Static RAM
Features
Functional Description [1]
■ Pin- and function-compatible with CY7C109B/CY7C1009B
The CY7C109D/CY7C1009D is a high-performance CMOS
static RAM organized as 131,072 words by 8 bits. Easy
memory expansion is provided by an active LOW Chip Enable
(CE1), an active HIGH Chip Enable (CE2), an active LOW
Output Enable (OE), and tri-state drivers.The eight input and
output pins (I/O0 through I/O7) are placed in a high-impedance
state when:
■ High speed
❐ tAA = 10 ns
■ Low active power
❐ ICC = 80 mA at 10 ns
■ Low CMOS standby power
❐ ISB2 = 3 mA
■ Deselected (CE1 HIGH or CE2 LOW),
■ Outputs are disabled (OE HIGH),
■ 2.0 V Data Retention
■ Automatic power-down when deselected
■ TTL-compatible inputs and outputs
■ Easy memory expansion with CE1, CE2 and OE options
■ When the write operation is active (CE1 LOW, CE2 HIGH,
and WE LOW)
Write to the device by taking Chip Enable One (CE1) and Write
Enable (WE) inputs LOW and Chip Enable Two (CE2) input
HIGH. Data on the eight I/O pins (I/O0 through I/O7) is then
written into the location specified on the address pins (A0
through A16).
■ CY7C109D available in Pb-free 32-pin 400-Mil wide Molded
SOJ and 32-pin TSOP I packages. CY7C1009D available in
Pb-free 32-pin 300-Mil wide Molded SOJ package
Read from the device by taking Chip Enable One (CE1) and
Output Enable (OE) LOW while forcing Write Enable (WE) and
Chip Enable Two (CE2) HIGH. Under these conditions, the
contents of the memory location specified by the address pins
appears on the I/O pins.
Logic Block Diagram
IO
0
INPUT BUFFER
IO
1
A
0
A
1
IO
2
A
2
128K x 8
ARRAY
A
A
A
A
A
A
IO
3
3
4
5
6
7
8
IO
4
IO
5
IO
6
IO
POWER
DOWN
7
CE
CE
COLUMN DECODER
1
2
WE
OE
Note
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05468 Rev. *G
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised April 15, 2011
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