Datasheet > CY7C109D-10VXI

CY7C109D-10VXI

更新时间： 2024-11-25 14:56:03

品牌	Logo	应用领域
英飞凌 - INFINEON		静态存储器
页数	文件大小	规格书
16页	876K
描述
Asynchronous SRAM

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中文翻译

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数据手册

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CY7C109D-10VXI 数据手册

CY7C109D

CY7C1009D

1-Mbit (128 K × 8) Static RAM

1-Mbit (128

K × 8) Static RAM

(OE), and tri-state drivers.The eight input and output pins (I/O₀

through I/O₇) are placed in a high-impedance state when:

Features

■ Pin- and function-compatible with CY7C109B/CY7C1009B

■ Deselected (CE₁HIGH or CE₂LOW),

■ Outputs are disabled (OE HIGH),

■ High speed

❐ t_AA= 10 ns

■ When the write operation is active (CE₁LOW, CE₂HIGH, and

WE LOW)

■ Low active power

❐ I_CC= 80 mA at 10 ns

Write to the device by taking Chip Enable One (CE₁) and Write

Enable (WE) inputs LOW and Chip Enable Two (CE₂) input

HIGH. Data on the eight I/O pins (I/O₀through I/O₇) is then

written into the location specified on the address pins (A₀through

■ Low CMOS standby power

❐ I_SB2= 3 mA

■ 2.0 V Data Retention

■ Automatic power-down when deselected

■ TTL-compatible inputs and outputs

■ Easy memory expansion with CE₁, CE₂and OE options

A₁₆).

Read from the device by taking Chip Enable One (CE₁) and

Output Enable (OE) LOW while forcing Write Enable (WE) and

Chip Enable Two (CE₂) HIGH. Under these conditions, the

contents of the memory location specified by the address pins

appears on the I/O pins.

■ CY7C109D available in Pb-free 32-pin 400-Mil wide Molded

SOJ and 32-pin TSOP I packages. CY7C1009D available in

Pb-free 32-pin 300-Mil wide Molded SOJ package

The CY7C109D/CY7C1009D device is suitable for interfacing

with processors that have TTL I/P levels. It is not suitable for

processors that require CMOS I/P levels. Please see Electrical

Characteristics on page 4 for more details and suggested

alternatives.

Functional Description

[1]

The CY7C109D/CY7C1009D

is a high-performance CMOS

static RAM organized as 131,072 words by 8 bits. Easy memory

expansion is provided by an active LOW Chip Enable (CE₁), an

active HIGH Chip Enable (CE₂), an active LOW Output Enable

For a complete list of related documentation, click here.

Logic Block Diagram

INPUT BUFFER

128K x 8

ARRAY

POWER

DOWN

COLUMN DECODER

Cypress Semiconductor Corporation

Document Number: 38-05468 Rev. *J

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised January 16, 2015

12 3 4 5 6 7...16

中文翻译

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与CY7C109D-10VXI相关器件

型号	品牌	获取价格	描述	数据表
CY7C109D-10VXIT	INFINEON	获取价格	Asynchronous SRAM
CY7C109D-10ZXC	CYPRESS	获取价格	暂无描述
CY7C109D-10ZXI	CYPRESS	获取价格	1-Mbit (128K x 8) Static RAM
CY7C109D-10ZXI	INFINEON	获取价格	Asynchronous SRAM
CY7C109D-10ZXIT	CYPRESS	获取价格	Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 8 X 20 MM, LEAD FREE, TSOP1-32
CY7C109D-10ZXIT	INFINEON	获取价格	Asynchronous SRAM
CY7C109D-12VXC	CYPRESS	获取价格	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, LEAD FREE, SOJ-32
CY7C109D-12VXI	CYPRESS	获取价格	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, LEAD FREE, SOJ-32
CY7C109D-12ZXC	CYPRESS	获取价格	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 8 X 20 MM, LEAD FREE, TSOP1-32
CY7C109L-15VI	CYPRESS	获取价格	Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

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