Datasheet > CY62148V_02

CY62148V_02

更新时间： 2024-11-20 04:53:27

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		/
页数	文件大小	规格书
9页	162K
描述
4M (512K x 8) Static RAM

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CY62148V_02 数据手册

CY62148V MoBL

4M (512K x 8) Static RAM

also has an automatic power-down feature that significantly

reduces power consumption by 99% when addresses are not

toggling. The device can be put into standby mode when

deselected (CE HIGH).

Features

• Wide voltage range: 2.7V–3.6V

• Ultra low active power

• Low standby power

Writing to the device is accomplished by taking Chip Enable

(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O

pins (I/O₀through I/O₇) is then written into the location

specified on the address pins (A₀through A₁₈).

• TTL-compatible inputs and outputs

• Automatic power-down when deselected

• CMOS for optimum speed/power

Reading from the device is accomplished by taking Chip

Enable (CE) and Output Enable (OE) LOW while forcing Write

Enable (WE) HIGH. Under these conditions, the contents of

the memory location specified by the address pins will appear

on the I/O pins.

• Package available in a 32 pin TSOPII and a 32-pin SOIC

package

Functional Description^[1]

The CY62148V is a high-performance CMOS static RAM

organized as 512K words by eight bits. This device features

advanced circuit design to provide ultra-low active current.

This is ideal for providing More Battery Life (MoBL ) in

portable applications such as cellular telephones. The device

The eight input/output pins (I/O₀through I/O₇) are placed in a

high-impedance state when the device is deselected (CE

HIGH), the outputs are disabled (OE HIGH), or during a write

operation (CE LOW and WE LOW).

Logic Block Diagram

I/O

Data in Drivers

512K x 8

ARRAY

POWER

DOWN

COLUMN

DECODER

I/O

Note:

1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.

Cypress Semiconductor Corporation

•

3901 North First Street

•

San Jose

•

CA 95134

•

408-943-2600

Document #: 38-05070 Rev. *A

Revised August 27, 2002

12 3 4 5 6 7...9

中文翻译

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与CY62148V_02相关器件

型号	品牌	获取价格	描述	数据表
CY62148V-55SC	CYPRESS	获取价格	Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.450 INCH, PLASTIC, SOIC-32
CY62148V-55ZC	CYPRESS	获取价格	Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, TSOP2-32
CY62148V-70SC	ROCHESTER	获取价格	Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.450 INCH, PLASTIC, SOIC-32
CY62148V-70SC	CYPRESS	获取价格	Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.450 INCH, PLASTIC, SOIC-32
CY62148VLL-70BAI	CYPRESS	获取价格	512K x 8 MoBL Static RAM
CY62148VLL-70BAI	ROCHESTER	获取价格	512KX8 STANDARD SRAM, 70ns, PBGA36, 7 X 8.50 X 1.50 MM, FINE PITCH, TBGA-36
CY62148VLL-70BAIT	ROCHESTER	获取价格	512KX8 STANDARD SRAM, 70ns, PBGA36, 7 X 8.50 X 1.50 MM, FINE PITCH, TBGA-36
CY62148VLL-70SI	CYPRESS	获取价格	512K x 8 MoBL Static RAM
CY62148VLL-70SI	ROCHESTER	获取价格	512KX8 STANDARD SRAM, 70ns, PDSO32, 0.450 INCH, PLASTIC, SOIC-32
CY62148VLL-70SIT	CYPRESS	获取价格	Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.450 INCH, PLASTIC, SOIC-32

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