Datasheet > CY62146E_13

CY62146E_13

更新时间： 2024-11-19 12:27:51

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		/
页数	文件大小	规格书
16页	309K
描述
4-Mbit (256 K x 16) Static RAM

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CY62146E_13 数据手册

CY62146E MoBL^®

4-Mbit (256 K × 16) Static RAM

4-Mbit (256

K × 16) Static RAM

feature that reduces power consumption when addresses are

not toggling. Placing the device into standby mode reduces

power consumption by more than 99% when deselected (CE

HIGH). The input and output pins (I/O₀through I/O₁₅) are placed

in a high impedance state when the device is deselected (CE

HIGH), the outputs are disabled (OE HIGH), both Byte High

Enable and Byte Low Enable are disabled (BHE, BLE HIGH) or

during a write operation (CE LOW and WE LOW).

Features

■ Very high speed: 45 ns

■ Wide voltage range: 4.5 V to 5.5 V

■ Ultra low standby power

❐ Typical standby current: 1 A

❐ Maximum standby current: 7 A

To write to the device, take Chip Enable (CE) and Write Enable

(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data

from I/O pins (I/O₀through I/O₇) is written into the location

specified on the address pins (A₀through A₁₇). If Byte High

Enable (BHE) is LOW, then data from I/O pins (I/O₈through

I/O₁₅) is written into the location specified on the address pins

(A₀through A₁₇).

■ Ultra low active power

❐ Typical active current: 2 mA at f = 1 MHz

■ Easy memory expansion with CE and OE features

■ Automatic power down when deselected

■ Complementary metal oxide semiconductor (CMOS) for

To read from the device, take Chip Enable (CE) and Output

Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If

Byte Low Enable (BLE) is LOW, then data from the memory

location specified by the address pins appears on I/O₀to I/O₇. If

Byte High Enable (BHE) is LOW, then data from memory

appears on I/O₈to I/O₁₅. See Truth Table on page 11 for a

complete description of read and write modes.

optimum speed and power

■ Available in Pb-free 44-pin thin small outline package (TSOP)

Type II package

Functional Description

The CY62146E is a high performance CMOS static RAM

organized as 256K words by 16 bits. This device features

advanced circuit design to provide ultra low active current. It is

ideal for providing More Battery Life (MoBL^®) in portable

applications. The device also has an automatic power down

The CY62146E device is suitable for interfacing with processors

that have TTL I/P levels. It is not suitable for processors that

require CMOS I/P levels. Please Electrical Characteristics on

page 4 for more details and suggested alternatives.

Logic Block Diagram

DATA IN DRIVERS

A₁₀

A₉

A₈

A₇

A₆

A₅

A₄

A₃

A₂

A₁

A₀

256 K × 16

RAM Array

I/O₀–I/O₇

I/O₈–I/O₁₅

COLUMN DECODER

BHE

BLE

Cypress Semiconductor Corporation

Document Number: 001-07970 Rev. *J

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised June 4, 2013

12 3 4 5 6 7...16

中文翻译

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与CY62146E_13相关器件

型号	品牌	获取价格	描述	数据表
CY62146ELL	CYPRESS	获取价格	4-Mbit (256K x 16) Static RAM
CY62146ELL-45ZSXA	CYPRESS	获取价格	4-Mbit (256K x 16) Static RAM
CY62146ELL-45ZSXI	CYPRESS	获取价格	4-Mbit (256K x 16) Static RAM
CY62146ELL-45ZSXI	INFINEON	获取价格	Asynchronous SRAM
CY62146ELL-45ZSXIT	INFINEON	获取价格	Asynchronous SRAM
CY62146ESL	CYPRESS	获取价格	4-Mbit (256K x 16) Static RAM
CY62146ESL_08	CYPRESS	获取价格	4-Mbit (256K x 16) Static RAM
CY62146ESL_09	CYPRESS	获取价格	4-Mbit (256K x 16) Static RAM
CY62146ESL_11	CYPRESS	获取价格	4-Mbit (256K x 16) Static RAM Automatic power down when deselected
CY62146ESL-45ZSXI	CYPRESS	获取价格	4-Mbit (256K x 16) Static RAM

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