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CY62146ESL-45ZSXI PDF预览

CY62146ESL-45ZSXI

更新时间: 2024-11-19 04:53:27
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
12页 312K
描述
4-Mbit (256K x 16) Static RAM

CY62146ESL-45ZSXI 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSOP2
包装说明:TSOP2, TSOP44,.46,32针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41Factory Lead Time:1 week
风险等级:1.89最长访问时间:45 ns
其他特性:IT CAN ALSO OPERATES WITH 4.5V TO 5.5V SUPPLYI/O 类型:COMMON
JESD-30 代码:R-PDSO-G44JESD-609代码:e4
长度:18.415 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
湿度敏感等级:3功能数量:1
端子数量:44字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP44,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:2.5/5 V
认证状态:Not Qualified座面最大高度:1.194 mm
最大待机电流:0.000007 A最小待机电流:1.5 V
子类别:SRAMs最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.2 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:10.16 mm
Base Number Matches:1

CY62146ESL-45ZSXI 数据手册

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CY62146ESL MoBL®  
4-Mbit (256K x 16) Static RAM  
mode reduces power consumption by more than 99% when  
deselected (CE HIGH). The input and output pins (IO0 through  
IO15) are placed in a high impedance state when:  
Features  
Very high speed: 45 ns  
Deselected (CE HIGH)  
Wide voltage range: 2.2V–3.6V and 4.5V–5.5V  
Outputs are disabled (OE HIGH)  
Ultra low standby power  
Typical Standby current: 1 μA  
Maximum Standby current: 7 μA  
Both Byte High Enable and Byte Low Enable are disabled  
(BHE, BLE HIGH)  
Ultra low active power  
Typical active current: 2 mA at f = 1 MHz  
Write operation is active (CE LOW and WE LOW)  
To write to the device, take Chip Enable (CE) and Write Enable  
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data  
from IO pins (IO0 through IO7) is written into the location  
specified on the address pins (A0 through A17). If Byte High  
Enable (BHE) is LOW, then data from IO pins (IO8 through IO15  
is written into the location specified on the address pins (A0  
through A17).  
Easy memory expansion with CE and OE features  
Automatic power down when deselected  
CMOS for optimum speed and power  
)
Available in Pb-free 44-pin TSOP II package  
To read from the device, take Chip Enable (CE) and Output  
Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If  
Byte Low Enable (BLE) is LOW, then data from the memory  
location specified by the address pins appears on IO0 to IO7. If  
Byte High Enable (BHE) is LOW, then data from memory  
appears on IO8 to IO15. See the “Truth Table” on page 10 for a  
complete description of read and write modes.  
Functional Description  
The CY62146ESL is a high performance CMOS static RAM  
organized as 256K words by 16 bits. This device features  
advanced circuit design to provide ultra low active current. This  
is ideal for providing More Battery Life(MoBL®) in portable  
applications such as cellular telephones. The device also has an  
automatic power down feature that reduces power consumption  
when addresses are not toggling. Placing the device into standby  
For best practice recommendations, refer to the Cypress  
application note AN1064, SRAM System Guidelines.  
Logic Block Diagram  
DATA IN DRIVERS  
A10  
A9  
A8  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
256K x 16  
RAM Array  
IO0–IO7  
IO8–IO15  
COLUMN DECODER  
BHE  
WE  
CE  
OE  
BLE  
Cypress Semiconductor Corporation  
Document #: 001-43142 Rev. **  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised January 04, 2008  
[+] Feedback  

CY62146ESL-45ZSXI 替代型号

型号 品牌 替代类型 描述 数据表
CY62146ESL-45ZSXIT CYPRESS

完全替代

Standard SRAM, 256KX16, 45ns, CMOS, PDSO44, LEAD FREE, TSOP2-44

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