Datasheet > CY62146ESL_11

CY62146ESL_11

更新时间： 2024-11-23 09:42:47

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		/
页数	文件大小	规格书
15页	250K
描述
4-Mbit (256K x 16) Static RAM Automatic power down when deselected

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CY62146ESL_11 数据手册

CY62146ESL MoBL^

4-Mbit (256K x 16) Static RAM

applications such as cellular telephones. The device also has an

automatic power down feature that reduces power consumption

when addresses are not toggling. Placing the device into standby

mode reduces power consumption by more than 99% when

deselected (CE HIGH). The input and output pins (I/O₀through

I/O₁₅) are placed in a high impedance state when the device is

deselected (CE HIGH), the outputs are disabled (OE HIGH),

both Byte High Enable and Byte Low Enable are disabled (BHE,

BLE HIGH) or during a write operation (CE LOW and WE LOW).

Features

■ Very high speed: 45 ns

■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V

■ Ultra low standby power

❐ Typical Standby current: 1 A

❐ Maximum Standby current: 7 A

■ Ultra low active power

❐ Typical active current: 2 mA at f = 1 MHz

To write to the device, take Chip Enable (CE) and Write Enable

(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data

from I/O pins (I/O₀through I/O₇) is written into the location

specified on the address pins (A₀through A₁₇). If Byte High

Enable (BHE) is LOW, then data from I/O pins (I/O₈through

I/O₁₅) is written into the location specified on the address pins

(A₀through A₁₇).

■ Easy memory expansion with CE and OE features

■ Automatic power down when deselected

■ Complementary metal oxide semiconductor (CMOS) for

optimum speed and power

To read from the device, take Chip Enable (CE) and Output

Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If

Byte Low Enable (BLE) is LOW, then data from the memory

location specified by the address pins appears on I/O₀to I/O₇. If

Byte High Enable (BHE) is LOW, then data from memory

appears on I/O₈to I/O₁₅. See the “Truth Table” on page 11 for a

complete description of read and write modes.

■ AvailableinPb-free44-pinthinsmalloutlinepackage(TSOP) II

package

Functional Description

The CY62146ESL is a high performance CMOS static RAM

organized as 256K words by 16 bits. This device features

advanced circuit design to provide ultra low active current. This

is ideal for providing More Battery Life (MoBL^) in portable

Logic Block Diagram

DATA IN DRIVERS

A₁₀

A₉

A₈

A₇

A₆

A₅

A₄

A₃

A₂

A₁

A₀

256K x 16

RAM Array

I/O₀–I/O₇

I/O₈–I/O₁₅

COLUMN DECODER

BHE

BLE

Cypress Semiconductor Corporation

Document #: 001-43142 Rev. *C

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised June 29, 2011

12 3 4 5 6 7...15

中文翻译

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与CY62146ESL_11相关器件

型号	品牌	获取价格	描述	数据表
CY62146ESL-45ZSXI	CYPRESS	获取价格	4-Mbit (256K x 16) Static RAM
CY62146ESL-45ZSXI	INFINEON	获取价格	Asynchronous SRAM
CY62146ESL-45ZSXIT	CYPRESS	获取价格	Standard SRAM, 256KX16, 45ns, CMOS, PDSO44, LEAD FREE, TSOP2-44
CY62146ESL-45ZSXIT	INFINEON	获取价格	Asynchronous SRAM
CY62146EV30	CYPRESS	获取价格	4-Mbit (256K x 16) Static RAM
CY62146EV30_09	CYPRESS	获取价格	4-Mbit (256K x 16) Static RAM
CY62146EV30LL	CYPRESS	获取价格	4-Mbit (256K x 16) Static RAM
CY62146EV30LL-45BVXI	CYPRESS	获取价格	4-Mbit (256K x 16) Static RAM
CY62146EV30LL-45BVXI	INFINEON	获取价格	Asynchronous SRAM
CY62146EV30LL-45BVXIT	CYPRESS	获取价格	Standard SRAM, 256KX16, 45ns, CMOS, PBGA48, 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48

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