Datasheet > CY62146EV30_09

CY62146EV30_09

更新时间： 2024-11-19 06:51:35

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		/
页数	文件大小	规格书
13页	444K
描述
4-Mbit (256K x 16) Static RAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CY62146EV30_09 数据手册

CY62146EV30 MoBL^®

4-Mbit (256K x 16) Static RAM

current. Ultra low active current is ideal for providing More

Battery Life™ (MoBL^®) in portable applications such as cellular

telephones. The device also has an automatic power down

feature that significantly reduces power consumption by 80

percent when addresses are not toggling.The device can also be

put into standby mode reducing power consumption by more

than 99 percent when deselected (CE HIGH). The input and

output pins (I/O₀through I/O₁₅) are placed in a high impedance

state when: the device is deselected (CE HIGH), outputs are

disabled (OE HIGH), both Byte High Enable and Byte Low

Enable are disabled (BHE, BLE HIGH), or a write operation is in

progress (CE LOW and WE LOW).

Features

■ Very High Speed: 45 ns

■ Temperature Ranges

❐ Industrial: –40°C to +85°C

❐ Automotive-A: –40°C to +85°C

■ Wide Voltage Range: 2.20V–3.60V

■ Pin Compatible with CY62146DV30

■ Ultra Low Standby Power

❐ Typical standby current: 1 μA

❐ Maximum standby current: 7 μA

To write to the device, take Chip Enable (CE ) and Write Enable

(WE) input LOW. If Byte Low Enable (BLE) is LOW, then data

from I/O pins (I/O₀through I/O₇) is written into the location

specified on the address pins (A₀through A₁₇). If Byte High

Enable (BHE) is LOW, then data from the I/O pins (I/O₈through

I/O₁₅) is written into the location specified on the address pins

(A₀through A₁₇).

■ Ultra Low Active Power

❐ Typical active current: 2 mA at f = 1 MHz

■ Easy Memory Expansion with CE and OE Features

■ Automatic Power Down when Deselected

■ CMOS for Optimum Speed and Power

To read from the device, take Chip Enable (CE) and Output

Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If

Byte Low Enable (BLE) is LOW, then data from the memory

location specified by the address pins appears on I/O₀to I/O₇. If

Byte High Enable (BHE) is LOW, then data from memory

appears on I/O₈to I/O₁₅. See the “Truth Table” on page 9 for a

complete description of read and write modes.

■ Available in a Pb-free 48-ball VFBGA and 44-pin TSOP II

Packages

Functional Description

The CY62146EV30 is a high performance CMOS static RAM

organized as 256K words by 16 bits. This device features an

advanced circuit design designed to provide an ultra low active

For best practice recommendations, refer to the Cypress

application note AN1064, SRAM System Guidelines.

Logic Block Diagram

DATA IN DRIVERS

A₁₀

A₉

A₈

A₇

A₆

A₅

A₄

A₃

A₂

A₁

A₀

256K x 16

RAM Array

IO₀–IO₇

IO₈–IO₁₅

COLUMN DECODER

BHE

BLE

Cypress Semiconductor Corporation

Document Number: 38-05567 Rev. *D

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised March 23, 2009

[+] Feedback

12 3 4 5 6 7...13

中文翻译

下载PDF

与CY62146EV30_09相关器件

型号	品牌	获取价格	描述	数据表
CY62146EV30LL	CYPRESS	获取价格	4-Mbit (256K x 16) Static RAM
CY62146EV30LL-45BVXI	CYPRESS	获取价格	4-Mbit (256K x 16) Static RAM
CY62146EV30LL-45BVXI	INFINEON	获取价格	Asynchronous SRAM
CY62146EV30LL-45BVXIT	CYPRESS	获取价格	Standard SRAM, 256KX16, 45ns, CMOS, PBGA48, 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48
CY62146EV30LL-45BVXIT	INFINEON	获取价格	Asynchronous SRAM
CY62146EV30LL-45ZSXA	CYPRESS	获取价格	4-Mbit (256K x 16) Static RAM
CY62146EV30LL-45ZSXAT	CYPRESS	获取价格	Standard SRAM, 256KX16, 45ns, CMOS, PDSO44, LEAD FREE, TSOP2-44
CY62146EV30LL-45ZSXI	CYPRESS	获取价格	4-Mbit (256K x 16) Static RAM
CY62146EV30LL-45ZSXI	INFINEON	获取价格	Asynchronous SRAM
CY62146EV30LL-45ZSXIT	CYPRESS	获取价格	Standard SRAM, 256KX16, 45ns, CMOS, PDSO44, LEAD FREE, TSOP2-44

与CY62146EV30_09相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

23
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

15
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

45
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

45

产品中心

服务支持

精选活动

关于我们

帮助中心

CY62146EV30_09

CY62146EV30_09 数据手册

与CY62146EV30_09相关器件

与CY62146EV30_09相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CY62146EV30_09

CY62146EV30_09 数据手册

与CY62146EV30_09相关器件

与CY62146EV30_09相关文章

您还可以找

您在本页遇到什么问题？