CY62146E MoBL®
4-Mbit (256K x 16) Static RAM
device into standby mode reduces power consumption by
more than 99% when deselected (CE HIGH). The input and
output pins (IO0 through IO15) are placed in a high impedance
state when:
Features
• Very high speed: 45 ns
• Wide voltage range: 4.5V–5.5V
• Ultra low standby power
• Deselected (CE HIGH)
• Outputs are disabled (OE HIGH)
— Typical standby current: 1 µA
• Both byte high enable and byte low enable are disabled
(BHE, BLE HIGH)
— Maximum standby current: 7 µA
• Ultra low active power
• When the write operation is active (CE LOW and WE LOW)
— Typical active current: 2 mA @ f = 1 MHz
• Easy memory expansion with CE and OE features
• Automatic power down when deselected
• CMOS for optimum speed and power
• Offered in Pb-free 44-pin TSOP II package
To write to the device, take Chip Enable (CE) and Write Enable
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data
from IO pins (IO0 through IO7) is written into the location
specified on the address pins (A0 through A17). If Byte High
Enable (BHE) is LOW, then data from IO pins (IO8 through
IO15) is written into the location specified on the address pins
(A0 through A17).
Functional Description[1]
To read from the device, take Chip Enable (CE) and Output
Enable (OE) LOW while forcing the Write Enable (WE) HIGH.
If Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins appears on IO0 to IO7.
If Byte High Enable (BHE) is LOW, then data from memory
appears on IO8 to IO15. See the “Truth Table” on page 9 for a
complete description of read and write modes.
The CY62146E is a high performance CMOS static RAM
organized as 256K words by 16 bits. This device features
advanced circuit design to provide ultra low active current.
This is ideal for providing More Battery Life™ (MoBL®) in
portable applications such as cellular telephones. The device
also has an automatic power down feature that reduces power
consumption when addresses are not toggling. Placing the
Logic Block Diagram
DATA IN DRIVERS
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
256K x 16
RAM Array
IO0–IO7
IO8–IO15
COLUMN DECODER
BHE
WE
CE
OE
BLE
Note
1. For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.
Cypress Semiconductor Corporation
Document #: 001-07970 Rev. *C
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised May 4, 2007
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