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CY62146E PDF预览

CY62146E

更新时间: 2024-11-06 04:53:23
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
11页 529K
描述
4-Mbit (256K x 16) Static RAM

CY62146E 数据手册

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CY62146E MoBL®  
4-Mbit (256K x 16) Static RAM  
device into standby mode reduces power consumption by  
more than 99% when deselected (CE HIGH). The input and  
output pins (IO0 through IO15) are placed in a high impedance  
state when:  
Features  
• Very high speed: 45 ns  
• Wide voltage range: 4.5V–5.5V  
• Ultra low standby power  
• Deselected (CE HIGH)  
• Outputs are disabled (OE HIGH)  
— Typical standby current: 1 µA  
• Both byte high enable and byte low enable are disabled  
(BHE, BLE HIGH)  
— Maximum standby current: 7 µA  
• Ultra low active power  
• When the write operation is active (CE LOW and WE LOW)  
— Typical active current: 2 mA @ f = 1 MHz  
• Easy memory expansion with CE and OE features  
• Automatic power down when deselected  
• CMOS for optimum speed and power  
• Offered in Pb-free 44-pin TSOP II package  
To write to the device, take Chip Enable (CE) and Write Enable  
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data  
from IO pins (IO0 through IO7) is written into the location  
specified on the address pins (A0 through A17). If Byte High  
Enable (BHE) is LOW, then data from IO pins (IO8 through  
IO15) is written into the location specified on the address pins  
(A0 through A17).  
Functional Description[1]  
To read from the device, take Chip Enable (CE) and Output  
Enable (OE) LOW while forcing the Write Enable (WE) HIGH.  
If Byte Low Enable (BLE) is LOW, then data from the memory  
location specified by the address pins appears on IO0 to IO7.  
If Byte High Enable (BHE) is LOW, then data from memory  
appears on IO8 to IO15. See the “Truth Table” on page 9 for a  
complete description of read and write modes.  
The CY62146E is a high performance CMOS static RAM  
organized as 256K words by 16 bits. This device features  
advanced circuit design to provide ultra low active current.  
This is ideal for providing More Battery Life™ (MoBL®) in  
portable applications such as cellular telephones. The device  
also has an automatic power down feature that reduces power  
consumption when addresses are not toggling. Placing the  
Logic Block Diagram  
DATA IN DRIVERS  
A10  
A9  
A8  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
256K x 16  
RAM Array  
IO0–IO7  
IO8–IO15  
COLUMN DECODER  
BHE  
WE  
CE  
OE  
BLE  
Note  
1. For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.  
Cypress Semiconductor Corporation  
Document #: 001-07970 Rev. *C  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised May 4, 2007  
[+] Feedback  

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