Datasheet > CY62146E

CY62146E

更新时间： 2024-11-19 04:53:23

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		/
页数	文件大小	规格书
11页	529K
描述
4-Mbit (256K x 16) Static RAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CY62146E 数据手册

CY62146E MoBL^®

4-Mbit (256K x 16) Static RAM

device into standby mode reduces power consumption by

more than 99% when deselected (CE HIGH). The input and

output pins (IO₀through IO₁₅) are placed in a high impedance

state when:

Features

• Very high speed: 45 ns

• Wide voltage range: 4.5V–5.5V

• Ultra low standby power

• Deselected (CE HIGH)

• Outputs are disabled (OE HIGH)

— Typical standby current: 1 µA

• Both byte high enable and byte low enable are disabled

(BHE, BLE HIGH)

— Maximum standby current: 7 µA

• Ultra low active power

• When the write operation is active (CE LOW and WE LOW)

— Typical active current: 2 mA @ f = 1 MHz

• Easy memory expansion with CE and OE features

• Automatic power down when deselected

• CMOS for optimum speed and power

• Offered in Pb-free 44-pin TSOP II package

To write to the device, take Chip Enable (CE) and Write Enable

(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data

from IO pins (IO₀through IO₇) is written into the location

specified on the address pins (A₀through A₁₇). If Byte High

Enable (BHE) is LOW, then data from IO pins (IO₈through

IO₁₅) is written into the location specified on the address pins

(A₀through A₁₇).

Functional Description^[1]

To read from the device, take Chip Enable (CE) and Output

Enable (OE) LOW while forcing the Write Enable (WE) HIGH.

If Byte Low Enable (BLE) is LOW, then data from the memory

location specified by the address pins appears on IO₀to IO₇.

If Byte High Enable (BHE) is LOW, then data from memory

appears on IO₈to IO₁₅. See the “Truth Table” on page 9 for a

complete description of read and write modes.

The CY62146E is a high performance CMOS static RAM

organized as 256K words by 16 bits. This device features

advanced circuit design to provide ultra low active current.

This is ideal for providing More Battery Life™ (MoBL^®) in

portable applications such as cellular telephones. The device

also has an automatic power down feature that reduces power

consumption when addresses are not toggling. Placing the

Logic Block Diagram

DATA IN DRIVERS

A₁₀

A₉

A₈

A₇

A₆

A₅

A₄

A₃

A₂

A₁

A₀

256K x 16

RAM Array

IO₀–IO₇

IO₈–IO₁₅

COLUMN DECODER

BHE

BLE

Note

1. For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.

Cypress Semiconductor Corporation

Document #: 001-07970 Rev. *C

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised May 4, 2007

[+] Feedback

12 3 4 5 6 7...11

中文翻译

下载PDF

与CY62146E相关器件

型号	品牌	获取价格	描述	数据表
CY62146E_08	CYPRESS	获取价格	4-Mbit (256K x 16) Static RAM
CY62146E_09	CYPRESS	获取价格	4-Mbit (256K x 16) Static RAM
CY62146E_11	CYPRESS	获取价格	4-Mbit (256K x 16) Static RAM
CY62146E_1106	CYPRESS	获取价格	4-Mbit (256K x 16) Static RAM Automatic power down when deselected
CY62146E_13	CYPRESS	获取价格	4-Mbit (256 K x 16) Static RAM
CY62146ELL	CYPRESS	获取价格	4-Mbit (256K x 16) Static RAM
CY62146ELL-45ZSXA	CYPRESS	获取价格	4-Mbit (256K x 16) Static RAM
CY62146ELL-45ZSXI	CYPRESS	获取价格	4-Mbit (256K x 16) Static RAM
CY62146ELL-45ZSXI	INFINEON	获取价格	Asynchronous SRAM
CY62146ELL-45ZSXIT	INFINEON	获取价格	Asynchronous SRAM

与CY62146E相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

23
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

15
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

45
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

45

产品中心

服务支持

精选活动

关于我们

帮助中心

CY62146E

CY62146E 数据手册

与CY62146E相关器件

与CY62146E相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CY62146E

CY62146E 数据手册

与CY62146E相关器件

与CY62146E相关文章

您还可以找

您在本页遇到什么问题？