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CY14B512P_12 PDF预览

CY14B512P_12

更新时间: 2024-09-13 12:50:27
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器时钟
页数 文件大小 规格书
34页 1860K
描述
512-Kbit (64 K × 8) Serial (SPI) nvSRAM with Real Time Clock

CY14B512P_12 数据手册

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CY14B512P  
512-Kbit (64 K × 8) Serial (SPI) nvSRAM  
with Real Time Clock  
512-Kbit (64  
K × 8) Serial (SPI) nvSRAM with Real Time Clock  
Write protection  
Hardware protection using Write Protect (WP) pin  
Features  
512-Kbit nonvolatile static random access memory (nvSRAM)  
Internally organized as 64 K × 8  
Software protection using Write Disable instruction  
Software block protection for 1/4, 1/2, or entire array  
STORE to QuantumTrap nonvolatile elements initiated  
automatically on power-down (AutoStore) or by the user  
using HSB pin (Hardware STORE) or SPI instruction  
(Software STORE)  
Low power consumption  
Single 3 V + 20%, –10% operation  
Average active current of 10 mA at 40 MHz operation  
RECALL to SRAM initiated on power-up (Power-Up  
RECALL) or by serial peripheral interface (SPI) instruction  
(Software RECALL)  
Industry standard configurations  
Industrial temperature  
16-pin small outline integrated circuit (SOIC) package  
Restriction of hazardous substances (RoHS) compliant  
Automatic STORE on power-down with a small capacitor  
High reliability  
Overview  
Infinite read, write, and RECALL cycles  
1 million STORE cycles to QuantumTrap  
Data retention: 20 years  
The Cypress CY14B512P combines a 512-Kbit nvSRAM[1] with  
a full-featured real time clock in a monolithic integrated circuit  
with serial SPI interface. The memory is organized as 64 K words  
of 8 bits each. The embedded nonvolatile elements incorporate  
the QuantumTrap technology, creating the world’s most reliable  
nonvolatile memory. The SRAM provides infinite read and write  
cycles, while the QuantumTrap cells provide highly reliable  
nonvolatile storage of data. Data transfers from SRAM to the  
nonvolatile elements (STORE operation) takes place  
automatically at power-down. On power-up, data is restored to  
the SRAM from the nonvolatile memory (RECALL operation).  
The STORE and RECALL operations can also be initiated by the  
user through SPI instruction.  
Real time clock (RTC)  
Full featured RTC  
Watchdog timer  
Clock alarm with programmable interrupts  
Capacitor or battery backup for RTC  
Backup current of 0.35 µA (typical)  
High-speed SPI  
40 MHz clock rate – SRAM memory access  
25 MHz clock rate – RTC memory access  
Supports SPI mode 0 (0,0) and mode 3 (1,1)  
Logic Block Diagram  
VCC  
VCAP  
QuantumTrap  
64 K X 8  
Power Control  
CS  
WP  
SCK  
Instruction decode  
Write protect  
Control logic  
STORE/RECALL  
Control  
STORE  
HSB  
SRAM Array  
HOLD  
RECALL  
64 K X 8  
Instruction  
register  
D0-D7  
A0-A15  
X
out  
in  
Address  
Decoder  
RTC  
X
INT  
MUX  
Data I/O register  
Status Register  
SO  
SI  
Note  
1. This device is referred to as nvSRAM throughout the document.  
Cypress Semiconductor Corporation  
Document Number: 001-53872 Rev. *H  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised August 13, 2012  

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