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CY14B512Q2-LHXI PDF预览

CY14B512Q2-LHXI

更新时间： 2024-11-24 09:41:07
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
27页 1458K
描述
512-Kbit (64 K × 8) Serial (SPI) nvSRAM

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中文翻译

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CY14B512Q2-LHXI 技术参数

是否Rohs认证： 符合生命周期：Active
零件包装代码：DFN包装说明：HVSON,
针数：8Reach Compliance Code：compliant
ECCN代码：3A991.B.2.BHTS代码：8542.32.00.41
风险等级：5.8Is Samacsys：N
JESD-30 代码：R-PDSO-N8JESD-609代码：e4
长度：6 mm内存密度：524288 bit
内存集成电路类型：NON-VOLATILE SRAM内存宽度：8
湿度敏感等级：3功能数量：1
端子数量：8字数：65536 words
字数代码：64000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：64KX8封装主体材料：PLASTIC/EPOXY
封装代码：HVSON封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE并行/串行：SERIAL
峰值回流温度（摄氏度）：260认证状态：Not Qualified
座面最大高度：0.8 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：NO LEAD端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：30
宽度：5 mmBase Number Matches：1

CY14B512Q2-LHXI 数据手册

 浏览型号CY14B512Q2-LHXI的Datasheet PDF文件第2页浏览型号CY14B512Q2-LHXI的Datasheet PDF文件第3页浏览型号CY14B512Q2-LHXI的Datasheet PDF文件第4页浏览型号CY14B512Q2-LHXI的Datasheet PDF文件第5页浏览型号CY14B512Q2-LHXI的Datasheet PDF文件第6页浏览型号CY14B512Q2-LHXI的Datasheet PDF文件第7页 
CY14B512Q1  
CY14B512Q2  
CY14B512Q3  
512-Kbit (64 K × 8) Serial (SPI) nvSRAM  
512-Kbit (64  
K × 8) Serial (SPI) nvSRAM  
■ Industry standard configurations  
❐ Industrial temperature  
❐ CY14B512Q1 has identical pin configuration to industry  
standard 8-pin NV memory  
Features  
■ 512-Kbit nonvolatile static random access memory (nvSRAM)  
❐ Internally organized as 64 K × 8  
❐ 8-pin dual flat no-lead (DFN) package and 16-pin small  
❐ STORE to QuantumTrap nonvolatile elements initiated  
automatically on power-down (AutoStore) or by user using  
HSB pin (Hardware STORE) or SPI instruction (Software  
STORE)  
outline integrated circuit (SOIC) package  
❐ Restriction of hazardous substances (RoHS) compliant  
❐ RECALL to SRAM initiated on power-up (Power-Up  
Functional Overview  
RECALL) or by SPI instruction (Software RECALL)  
The  
Cypress  
CY14B512Q1/CY14B512Q2/CY14B512Q3  
❐ Automatic STORE on power-down with a small capacitor  
(except for CY14B512Q1)  
combines a 512-Kbit nvSRAM[1] with a nonvolatile element in  
each memory cell with serial SPI interface. The memory is  
organized as 64 K words of 8 bits each. The embedded  
nonvolatile elements incorporate the QuantumTrap technology,  
creating the world’s most reliable nonvolatile memory. The  
SRAM provides infinite read and write cycles, while the  
QuantumTrap cell provides highly reliable nonvolatile storage of  
data. Data transfers from SRAM to the nonvolatile elements  
(STORE operation) takes place automatically at power-down  
(except for CY14B512Q1). On power-up, data is restored to the  
SRAM from the nonvolatile memory (RECALL operation). The  
STORE and RECALL operations can also be initiated by the user  
through SPI instruction.  
■ High reliability  
❐ Infinite read, write, and RECALL cycles  
❐ 1 million STORE cycles to QuantumTrap  
❐ Data retention: 20 years  
■ High speed serial peripheral interface (SPI)  
❐ 40 MHz clock rate  
❐ Supports SPI mode 0 (0,0) and mode 3 (1,1)  
■ Write protection  
❐ Hardware protection using Write Protect (WP) pin  
❐ Software protection using Write Disable instruction  
❐ Software block protection for 1/4,1/2, or entire array  
Configuration  
■ Low power consumption  
❐ Single 3 V +20%, –10% operation  
❐ Average active current of 10 mA at 40 MHz operation  
Feature  
AutoStore  
CY14B512Q1 CY14B512Q2 CY14B512Q3  
No  
Yes  
Yes  
Yes  
Yes  
Software  
STORE  
Yes  
Hardware  
STORE  
No  
No  
Yes  
VCC  
VCAP  
Logic Block Diagram  
QuantumTrap  
64 K X 8  
Power Control  
CS  
WP  
SCK  
Instruction decode  
Write protect  
Control logic  
STORE/RECALL  
Control  
STORE  
HSB  
SRAM Array  
HOLD  
RECALL  
64 K X 8  
Instruction  
register  
D0-D7  
A0-A15  
Address  
Decoder  
Data I/O register  
Status Register  
SO  
SI  
Note  
1. This device will be referred to as nvSRAM throughout the document.  
Cypress Semiconductor Corporation  
Document #: 001-53873 Rev. *E  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised January 12, 2011  
[+] Feedback  
1234567...27

中文翻译

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CY14B512Q2-LHXI 替代型号

型号 品牌 替代类型 描述 数据表
CY14B512Q2A-SXIT CYPRESS

完全替代

 512-Kbit (64 K x 8) SPI nvSRAM Infinite read, write, and RECALL cycles

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