Datasheet > 存储 > SRAM> CY14B512PA-SFXIT

CY14B512PA-SFXIT

更新时间： 2024-11-26 09:41:07

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器时钟
页数	文件大小	规格书
43页	1615K
描述
512-Kbit (64 K x 8) SPI nvSRAM with Real Time Clock Full-featured RTC

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CY14B512PA-SFXIT 技术参数

是否Rohs认证：	符合	生命周期：	End Of Life
零件包装代码：	SOIC	包装说明：	SOP, SOP16,.4
针数：	16	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	5.78	JESD-30 代码：	R-PDSO-G16
JESD-609代码：	e3	长度：	10.2865 mm
内存密度：	524288 bit	内存集成电路类型：	NON-VOLATILE SRAM
内存宽度：	8	湿度敏感等级：	3
功能数量：	1	端子数量：	16
字数：	65536 words	字数代码：	64000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	64KX8
封装主体材料：	PLASTIC/EPOXY	封装代码：	SOP
封装等效代码：	SOP16,.4	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	并行/串行：	SERIAL
峰值回流温度（摄氏度）：	260	电源：	3/3.3 V
认证状态：	Not Qualified	座面最大高度：	2.336 mm
最大待机电流：	0.00025 A	子类别：	SRAMs
最大压摆率：	0.01 mA	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	2.7 V	标称供电电压 (Vsup)：	3 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Matte Tin (Sn)
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
宽度：	7.4925 mm	Base Number Matches：	1

CY14B512PA-SFXIT 数据手册

CY14C512PA

CY14B512PA

CY14E512PA

512-Kbit (64 K × 8) SPI nvSRAM

with Real Time Clock

512-Kbit (64

K × 8) SPI nvSRAM with Real Time Clock

■ Write protection

Features

❐ Hardware protection using Write Protect (WP) pin

❐ Software protection using Write Disable instruction

❐ Software block protection for 1/4, 1/2, or entire array

■ 512-Kbit nonvolatile static random access memory (nvSRAM)

❐ Internally organized as 64 K × 8

❐ STORE to QuantumTrap nonvolatile elements initiated

automatically on power-down (AutoStore) or by using SPI

instruction (Software STORE) or HSB pin (Hardware

STORE)

❐ RECALL to SRAM initiated on power-up (Power-Up

RECALL) or by SPI instruction (Software RECALL)

■ Low power consumption

❐ Average active current of 3 mA at 40 MHz operation

❐ Average standby mode current of 250 µA

❐ Sleep mode current of 8 µA

■ Industry standard configurations

❐ Operating voltages:

• CY14C512PA : V_CC= 2.4 V to 2.6 V

• CY14B512PA : V_CC= 2.7 V to 3.6 V

• CY14E512PA : V_CC= 4.5 V to 5.5 V

❐ Industrial temperature

❐ Automatic STORE on power-down with a small capacitor

■ High reliability

❐ Infinite read, write, and RECALL cycles

❐ 1 million STORE cycles to QuantumTrap

❐ Data retention: 20 years at 85 C

❐ 16-pin small outline integrated circuit (SOIC) package

❐ Restriction of hazardous substances (RoHS) compliant

■ Real time clock (RTC)

❐ Full-featured RTC

❐ Watchdog timer

❐ Clock alarm with programmable interrupts

❐ Backup power fail indication

Overview

The Cypress CY14X512PA combines a 512-Kbit nvSRAM^[1]with

a full-featured RTC in a monolithic integrated circuit with serial

SPI interface. The memory is organized as 64 K words of 8 bits

each. The embedded nonvolatile elements incorporate the

QuantumTrap technology, creating the world’s most reliable

nonvolatile memory. The SRAM provides infinite read and write

cycles, while the QuantumTrap cells provide highly reliable

nonvolatile storage of data. Data transfers from SRAM to the

nonvolatile elements (STORE operation) takes place

automatically at power-down. On power-up, data is restored to

the SRAM from the nonvolatile memory (RECALL operation).

You can also initiate the STORE and RECALL operations

through SPI instruction.

❐ Square wave output with programmable frequency (1 Hz,

512 Hz, 4096 Hz, 32.768 kHz)

❐ Capacitor or battery backup for RTC

❐ Backup current of 0.45 µA (typical)

■ 40 MHz, and 104 MHz High-speed serial peripheral interface

(SPI)

❐ 40 MHz clock rate SPI write and read with zero cycle delay

❐ 104 MHz clock rate SPI write and read (with special fast read

instructions)

❐ Supports SPI mode 0 (0,0) and mode 3 (1,1)

■ SPI access to special functions

❐ Nonvolatile STORE/RECALL

❐ 8-byte serial number

❐ Manufacturer ID and Product ID

❐ Sleep mode

V_RTCcapV_RTCbat

V_CCV_CAP

Serial Number

8 x 8

Logic Block Diagram

Power Control

Block

Manufacture ID/

Product ID

QuantrumTrap

64 K x 8

SLEEP

STORE

RECALL

SRAM

64 K x 8

RDSN/WRSN/RDID

READ/WRITE

Memory

Data &

Address

Control

SPI Control Logic

Write Protection

Instruction decoder

STORE/RECALL/ASENB/ASDISB

SCK

WRSR/RDSR/WREN

RDRTC/WRTC

Status Register

X_in

RTC Control Logic

Registers

INT/SQW

X_out

Counters

Note

1. This device will be referred to as nvSRAM throughout the document.

Cypress Semiconductor Corporation

Document #: 001-65268 Rev. *B

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised May 5, 2011

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CY14B512PA-SFXIT 替代型号

型号	品牌	替代类型	描述	数据表
CY14B512I-SFXI	CYPRESS	类似代替	512-Kbit (64 K x 8) Serial (I2C) nvSRAM with Real Time Clock

与CY14B512PA-SFXIT相关器件

型号	品牌	获取价格	描述	数据表
CY14B512P-SFXI	CYPRESS	获取价格	512-Kbit (64 K × 8) Serial (SPI) nvSRAM with
CY14B512P-SFXIT	CYPRESS	获取价格	512-Kbit (64 K × 8) Serial (SPI) nvSRAM with
CY14B512Q	CYPRESS	获取价格	512-Kbit (64 K x 8) SPI nvSRAM Infinite read, write, and RECALL cycles
CY14B512Q1	CYPRESS	获取价格	512-Kbit (64 K × 8) Serial (SPI) nvSRAM
CY14B512Q1_12	CYPRESS	获取价格	512-Kbit (64 K Ã 8) Serial (SPI) nvSRAM
CY14B512Q1_13	CYPRESS	获取价格	512-Kbit (64 K x 8) Serial (SPI) nvSRAM
CY14B512Q1A-SXI	CYPRESS	获取价格	512-Kbit (64 K Ã 8) SPI nvSRAM
CY14B512Q1A-SXIT	CYPRESS	获取价格	512-Kbit (64 K Ã 8) SPI nvSRAM
CY14B512Q2	CYPRESS	获取价格	512-Kbit (64 K × 8) Serial (SPI) nvSRAM
CY14B512Q2A-SXI	CYPRESS	获取价格	512-Kbit (64 K x 8) SPI nvSRAM Infinite read, write, and RECALL cycles

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