CY14B512Q1
CY14B512Q2
CY14B512Q3
512-Kbit (64 K × 8) Serial (SPI) nvSRAM
512-Kbit (64
K × 8) Serial (SPI) nvSRAM
■ Industry standard configurations
❐ Industrial temperature
❐ CY14B512Q1 has identical pin configuration to industry
standard 8-pin NV memory
Features
■ 512-Kbit nonvolatile static random access memory (nvSRAM)
❐ Internally organized as 64 K × 8
❐ 8-pin dual flat no-lead (DFN) package and 16-pin small
❐ STORE to QuantumTrap nonvolatile elements initiated
automatically on power-down (AutoStore) or by user using
HSB pin (hardware STORE) or SPI instruction (Software
STORE)
outline integrated circuit (SOIC) package
❐ Restriction of hazardous substances (RoHS) compliant
❐ RECALL to SRAM initiated on power-up (power-Up
Functional Overview
RECALL) or by SPI instruction (software RECALL)
The
Cypress
CY14B512Q1/CY14B512Q2/CY14B512Q3
❐ Automatic STORE on power-down with a small capacitor
(except for CY14B512Q1)
combines a 512-Kbit nvSRAM[1] with a nonvolatile element in
each memory cell with serial SPI interface. The memory is
organized as 64 K words of 8 bits each. The embedded
nonvolatile elements incorporate the QuantumTrap technology,
creating the world’s most reliable nonvolatile memory. The
SRAM provides infinite read and write cycles, while the
QuantumTrap cell provides highly reliable nonvolatile storage of
data. Data transfers from SRAM to the nonvolatile elements
(STORE operation) takes place automatically at power-down
(except for CY14B512Q1). On power-up, data is restored to the
SRAM from the nonvolatile memory (RECALL operation). The
STORE and RECALL operations can also be initiated by the user
through SPI instruction.
■ High reliability
❐ Infinite read, write, and RECALL cycles
❐ 1 million STORE cycles to QuantumTrap
❐ Data retention: 20 years
■ High speed serial peripheral interface (SPI)
❐ 40 MHz clock rate
❐ Supports SPI mode 0 (0,0) and mode 3 (1,1)
■ Write protection
❐ Hardware protection using Write Protect (WP) pin
❐ Software protection using Write Disable instruction
❐ Software block protection for 1/4,1/2, or entire array
Configuration
■ Low power consumption
❐ Single 3 V +20%, –10% operation
❐ Average active current of 10 mA at 40 MHz operation
Feature
AutoStore
CY14B512Q1 CY14B512Q2 CY14B512Q3
No
Yes
Yes
Yes
Yes
Software
STORE
Yes
Hardware
STORE
No
No
Yes
VCC
VCAP
Logic Block Diagram
QuantumTrap
64 K X 8
Power Control
CS
WP
SCK
Instruction decode
Write protect
Control logic
STORE/RECALL
Control
STORE
HSB
SRAM Array
HOLD
RECALL
64 K X 8
Instruction
register
D0-D7
A0-A15
Address
Decoder
Data I/O register
Status Register
SO
SI
Note
1. This device will be referred to as nvSRAM throughout the document.
Cypress Semiconductor Corporation
Document Number: 001-53873 Rev. *H
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised August 13, 2012