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CY14C101J

更新时间： 2024-02-07 23:14:16
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
31页 1966K
描述
1-Mbit (128 K x 8) Serial (I2C) nvSRAM Infinite read, write, and RECALL cycles

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CY14C101J 技术参数

是否Rohs认证： 符合生命周期：Active
零件包装代码：SOIC包装说明：SOP, SOP16,.4
针数：16Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.41
风险等级：5.74JESD-30 代码：R-PDSO-G16
JESD-609代码：e3长度：10.2865 mm
内存密度：1048576 bit内存集成电路类型：NON-VOLATILE SRAM
内存宽度：8湿度敏感等级：3
功能数量：1端子数量：16
字数：131072 words字数代码：128000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：128KX8
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP16,.4封装形状：RECTANGULAR
封装形式：SMALL OUTLINE并行/串行：SERIAL
峰值回流温度（摄氏度）：260电源：2.5 V
认证状态：Not Qualified座面最大高度：2.667 mm
最大待机电流：0.00025 A子类别：SRAMs
最大压摆率：0.003 mA最大供电电压 (Vsup)：2.6 V
最小供电电压 (Vsup)：2.4 V标称供电电压 (Vsup)：2.5 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：MATTE TIN
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
宽度：7.4925 mmBase Number Matches：1

CY14C101J 数据手册

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CY14C101J  
CY14B101J, CY14E101J  
1-Mbit (128 K × 8) Serial (I2C) nvSRAM  
1-Mbit (128  
K × 8) Serial (I2C) nvSRAM  
■ Industry standard configurations  
❐ Operating voltages:  
Features  
■ 1-Mbit nonvolatile static random access memory (nvSRAM)  
❐ Internally organized as 128 K × 8  
• CY14C101J: VCC = 2.4 V to 2.6 V  
• CY14B101J: VCC = 2.7 V to 3.6 V  
❐ STORE to QuantumTrap nonvolatile elements initiated  
automatically on power-down (AutoStore) or by using I2C  
command (SoftwareSTORE) orHSBpin(HardwareSTORE)  
• CY14E101J: VCC = 4.5 V to 5.5 V  
❐ Industrial temperature  
❐ 8- and 16-pin small outline integrated circuit (SOIC) package  
❐ Restriction of hazardous substances (RoHS) compliant  
❐ RECALL to SRAM initiated on power-up (Power-Up  
RECALL) or by I2C command (Software RECALL)  
❐ Automatic STORE on power-down with a small capacitor  
(except for CY14X101J1)  
Overview  
The Cypress CY14C101J/CY14B101J/CY14E101J combines a  
1-Mbit nvSRAM[1] with a nonvolatile element in each memory  
cell. The memory is organized as 128 K words of 8 bits each. The  
embedded nonvolatile elements incorporate the QuantumTrap  
technology, creating the world’s most reliable nonvolatile  
memory. The SRAM provides infinite read and write cycles, while  
the QuantumTrap cells provide highly reliable nonvolatile  
storage of data. Data transfers from SRAM to the nonvolatile  
elements (STORE operation) takes place automatically at  
power-down (except for CY14X101J1). On power-up, data is  
restored to the SRAM from the nonvolatile memory (RECALL  
operation). The STORE and RECALL operations can also be  
initiated by the user through I2C commands.  
■ High reliability  
❐ Infinite read, write, and RECALL cycles  
❐ 1 million STORE cycles to QuantumTrap  
❐ Data retention: 20 years at 85 °C  
■ High speed I2C interface  
❐ Industry standard 100 kHz and 400 kHz speed  
❐ Fast-mode Plus: 1 MHz speed  
❐ High speed: 3.4 MHz  
❐ Zero cycle delay reads and writes  
■ Write protection  
❐ Hardware protection using Write Protect (WP) pin  
❐ Software block protection for 1/4, 1/2, or entire array  
■ I2C access to special functions  
❐ Nonvolatile STORE/RECALL  
❐ 8 byte serial number  
❐ Manufacturer ID and Product ID  
❐ Sleep mode  
Configuration  
Feature  
AutoStore  
CY14X101J1 CY14X101J2 CY14X101J3  
No  
Yes  
No  
Yes  
Yes  
No  
Yes  
Yes  
Yes  
Software STORE  
Hardware STORE  
■ Low power consumption  
❐ Average active current of 1 mA at 3.4 MHz operation  
❐ Average standby mode current of 150 µA  
❐ Sleep mode current of 8 µA  
Logic Block Diagram  
Serial Number  
8 x 8  
VCC VCAP  
Manufacture ID/  
Product ID  
Power Control  
Block  
Memory Control Register  
Command Register  
Quantrum Trap  
128 K x 8  
Sleep  
STORE  
SRAM  
128 K x 8  
Control Registers Slave  
Memory Slave  
SDA  
SCL  
A2, A1  
WP  
I2C Control Logic  
Slave Address  
Decoder  
Memory  
Address and Data  
Control  
RECALL  
Note  
2
1. Serial (I C) nvSRAM is referred to as nvSRAM throughout the datasheet.  
Cypress Semiconductor Corporation  
Document #: 001-54050 Rev. *F  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised May 4, 2011  
[+] Feedback  
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