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CSD25302Q2 PDF预览

CSD25302Q2

更新时间: 2024-11-29 09:33:55
品牌 Logo 应用领域
德州仪器 - TI /
页数 文件大小 规格书
9页 130K
描述
P-Channel NexFET? Power MOSFET

CSD25302Q2 数据手册

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CSD25302Q2  
www.ti.com  
SLPS234A NOVEMBER 2009REVISED OCTOBER 2010  
P-Channel NexFET™ Power MOSFET  
1
FEATURES  
PRODUCT SUMMARY  
Drain to Source Voltage  
Ultralow Qg and Qgd  
Low Thermal Resistance  
Avalanche Rated  
VDS  
Qg  
–20  
2.6  
V
Gate Charge Total (–4.5V)  
Gate Charge Gate to Drain  
nC  
nC  
m  
mΩ  
mΩ  
V
Qgd  
0.5  
Pb Free Terminal Plating  
RoHS Compliant  
VGS = –1.8V  
VGS = –2.5V  
VGS = –4.5V  
–0.65  
71  
56  
39  
RDS(on) Drain to Source On Resistance  
Halogen Free  
VGS(th)  
Threshold Voltage  
SON 2-mm × 2-mm Plastic Package  
ORDERING INFORMATION  
APPLICATIONS  
Device  
CSD25302Q2  
Package  
Media  
Qty  
Ship  
Battery Management  
Load Management  
Battery Protection  
SON 2-mm × 2-mm  
Plastic Package  
13-Inch  
Reel  
Tape and  
Reel  
3000  
ABSOLUTE MAXIMUM RATINGS  
DESCRIPTION  
TA = 25°C unless otherwise stated  
VALUE  
–20  
±8  
UNIT  
V
VDS  
VGS  
Drain to Source Voltage  
The device has been designed to deliver the lowest  
on resistance and gate charge in the smallest outline  
possible with excellent thermal characteristics in an  
ultra low profile. Low on resistance coupled with the  
extremely small footprint and low profile make the  
device ideal for battery operated space constrained  
applications.  
Gate to Source Voltage  
V
Continuous Drain Current, TC = 25°C  
Continuous Drain Current(1)  
Pulsed Drain Current, TA = 25°C(2)  
Power Dissipation  
–5  
A
ID  
–5  
A
IDM  
PD  
–20  
2.4  
A
W
TJ,  
TSTG  
Operating Junction and Storage  
Temperature Range  
–55 to 150  
°C  
Top View  
(1) Package Limited  
(2) Pulse duration 10 µs, duty cycle 2%  
S
S
G
1
2
3
6
5
4
S
S
D
S
D
P0112-01  
RDS(on) vs VGS  
GATE CHARGE  
6
150  
125  
100  
75  
I
D
= −3A  
I
D
= −3A  
V
DS  
= −10V  
5
4
3
2
1
0
T
= 125°C  
C
50  
25  
T
= 25°C  
C
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
1
2
3
4
5
6
7
8
Q
g
− Gate Charge − nC  
−V − Gate to Source Voltage − V  
GS  
G003  
G006  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2009–2010, Texas Instruments Incorporated  
 
 

CSD25302Q2 替代型号

型号 品牌 替代类型 描述 数据表
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