CSD25301W1015

更新时间： 2024-11-29 12:55:15

品牌	Logo	应用领域
德州仪器 - TI		/
页数	文件大小	规格书
11页	484K
描述
P-Channel NexFETâ¢ Power MOSFET

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CSD25301W1015 数据手册

CSD25301W1015

www.ti.com

SLPS210B –AUGUST 2009–REVISED OCTOBER 2010

P-Channel NexFET™ Power MOSFET

Check for Samples: CSD25301W1015

FEATURES

PRODUCT SUMMARY

•

Ultra Low Qg and Qgd

V_DS

Q_g

Drain to Source Voltage

Gate Charge Total (4.5V)

Gate Charge Gate to Drain

–20

1.9

Small Footprint

mΩ

Low Profile 0.62mm Height

Pb Free

Q_gd

0.4

V_GS= –1.5V

V_GS= –2.5V

V_GS= –4.5V

–0.75

175

R_DS(on)Drain to Source On Resistance

RoHS Compliant

Halogen Free

V_GS(th)

Voltage Threshold

CSP 1 × 1.5 mm Wafer Level Package

ORDERING INFORMATION

APPLICATIONS

Device

Package

Media

Qty

Ship

•

Battery Management

Load Switch

Battery Protection

1 × 1.5 Wafer

Level Package

Tape and

Reel

CSD25301W1015

7-inch reel

3000

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

T_A= 25°C unless otherwise stated

VALUE

UNIT

V_DS

V_GS

I_D

Drain to Source Voltage

–20

The device has been designed to deliver the lowest

on resistance and gate charge in the smallest outline

possible with excellent thermal characteristics in an

ultra low profile.

Gate to Source Voltage

±8

Continuous Drain Current, T_C= 25°C⁽¹⁾

Pulsed Drain Current, T_A= 25°C⁽²⁾

Power Dissipation⁽¹⁾

–2.2

–8.8

1.5

I_DM

P_D

Top View

T_J,

Operating Junction and Storage

–55 to 150

°C

T_STGTemperature Range

(1) R_qJA= 85°C/W on 1in²Cu (2 oz.) on 0.060" thick FR4 PCB.

(2) Pulse width ≤300ms, duty cycle ≤2%

P0099-01

R_DS(ON)vs V_GS

Gate Charge

300

250

200

150

100

= −1A

= −10V

= 125°C

= 25°C

0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50

−V − Gate to Source Voltage − V

Q − Gate Charge − nC

G006

G003

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6 7...11

中文翻译

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CSD25301W1015 替代型号

型号	品牌	替代类型	描述	数据表
CSD25304W1015	TI	功能相似	采用 1mm x 1.5mm WLP 封装的单路、32.5mΩ、-20V、P 沟道 Nex

与CSD25301W1015相关器件

型号	品牌	获取价格	描述	数据表
CSD25302Q2	TI	获取价格	P-Channel NexFET? Power MOSFET
CSD25303W1015	TI	获取价格	P-Channel NexFETâ¢ Power MOSFET
CSD25304W1015	TI	获取价格	采用 1mm x 1.5mm WLP 封装的单路、32.5mΩ、-20V、P 沟道 Nex
CSD25304W1015T	TI	获取价格	采用 1mm x 1.5mm WLP 封装的单路、32.5mΩ、-20V、P 沟道 Nex
CSD25310Q2	TI	获取价格	CSD25310Q2, 20 V P-Channel NexFET Power MOSFETs
CSD25310Q2T	TI	获取价格	采用 2mm x 2mm SON 封装的单路、23.9mΩ、-20V、P 沟道 NexFE
CSD25401Q3	TI	获取价格	P-Channel NexFETâ¢ Power MOSFETs
CSD25402Q3A	TI	获取价格	20 V P-Channel NexFET Power MOSFET
CSD25402Q3A_16	TI	获取价格	20 V P-Channel NexFET Power MOSFET
CSD25402Q3A_V01	TI	获取价格	CSD25402Q3A â20 V P-Channel NexFETâ¢ Power

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