5秒后页面跳转
CP611 PDF预览

CP611

更新时间: 2024-09-30 09:30:11
品牌 Logo 应用领域
CENTRAL 晶体开关放大器晶体管
页数 文件大小 规格书
2页 226K
描述
Power Transistor PNP - Amp / Switch Transistor Chip

CP611 数据手册

 浏览型号CP611的Datasheet PDF文件第2页 
TM  
PROCESS CP611  
Power Transistor  
Central  
Semiconductor Corp.  
PNP - Amp/Switch Transistor Chip  
PROCESS DETAILS  
Process  
Die Size  
EPITAXIAL BASE  
80 X 99 MILS  
12.5 ± 1 MILS  
12 X 32 MILS  
13 X 46 MILS  
Al - 50,000Å  
Die Thickness  
Base Bonding Pad Area  
Emitter Bonding Pad Area  
Top Side Metalization  
Back Side Metalization  
Cr/Ni/Ag - 16,000Å  
GEOMETRY  
GROSS DIE PER 4 INCH WAFER  
1,450  
PRINCIPAL DEVICE TYPES  
CJD42C  
TIP42C  
BACKSIDE COLLECTOR  
145 Adams Avenue  
Hauppauge, NY 11788 USA  
Tel: (631) 435-1110  
Fax: (631) 435-1824  
www.centralsemi.com  
R3 (21-September 2003)  

与CP611相关器件

型号 品牌 获取价格 描述 数据表
CP611_10 CENTRAL

获取价格

Power Transistor PNP - Amp/Switch Transistor Chip
CP611-2N5955 CENTRAL

获取价格

60V,6A,40W Bare die,99.000 X 80.000 mils,Transistor-Bipolar Power (>1A)
CP611-2N6107 CENTRAL

获取价格

70V,7A,40W Bare die,99.000 X 80.000 mils,Transistor-Bipolar Power (>1A)
CP611-CJD42C-CG CENTRAL

获取价格

Transistor
CP611-TIP42C CENTRAL

获取价格

100V,6A,2W Bare die,99.000 X 80.000 mils,Transistor-Bipolar Power (>1A)
CP611-TIP42C-CG CENTRAL

获取价格

Transistor
CP613V-J176 CENTRAL

获取价格

1V,4V,50mA,350mW Bare die,24.000 X 21.000 mils,JFET
CP616 CENTRAL

获取价格

Small Signal Transistor PNP - Silicon RF Transistor Chip
CP616-CM5160 CENTRAL

获取价格

40V,400mA,1W Bare die,21.700 X 21.700 mils,Transistor-Small Signal (<=1A)
CP617 CENTRAL

获取价格

Small Signal Transistor PNP - Silicon RF Transistor Chip