Datasheet > CP616

CP616

更新时间： 2024-09-30 03:26:23

品牌	Logo	应用领域
CENTRAL		晶体晶体管射频
页数	文件大小	规格书
2页	205K
描述
Small Signal Transistor PNP - Silicon RF Transistor Chip

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CP616 数据手册

PROCESS CP616

Small Signal Transistor

PNP - Silicon RF Transistor Chip

Central

Semiconductor Corp.

PROCESS DETAILS

Process

EPITAXIAL PLANAR

Die Size

Die Thickness

21.7 x 21.7 MILS

9.0 MILS

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

3.5 MILS DIAMETER

3.5 x 3.5 MILS

Al - 30,000Å

Au - 10,000Å

GEOMETRY

GROSS DIE PER 4 INCH WAFER

24,790

PRINCIPAL DEVICE TYPES

CM5160

BACKSIDE COLLECTOR

145 Adams Avenue

Hauppauge, NY 11788 USA

Tel: (631) 435-1110

Fax: (631) 435-1824

www.centralsemi.com

R2 (1-August 2002)

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型号	品牌	获取价格	描述	数据表
CP616-CM5160	CENTRAL	获取价格	40V,400mA,1W Bare die,21.700 X 21.700 mils,Transistor-Small Signal (<=1A)
CP617	CENTRAL	获取价格	Small Signal Transistor PNP - Silicon RF Transistor Chip
CP617-CM4957	CENTRAL	获取价格	RF Small Signal Bipolar Transistor,
CP618	CENTRAL	获取价格	Small Signal Transistor PNP - Silicon RF Transistor Chip
CP618-CM5583	CENTRAL	获取价格	RF Small Signal Bipolar Transistor,
CP620-CJD45H11	CENTRAL	获取价格	Power Bipolar Transistor,
CP622	CENTRAL	获取价格	Programmable Unijunction Transistor
CP622-2N6027	CENTRAL	获取价格	40V,150mA Bare die,27.560 X 27.560 mils,Programmable UJT
CP624	CENTRAL	获取价格	Programmable Unijunction Transistor
CP624-2N6028	CENTRAL	获取价格	40V,150mA Bare die,27.560 X 27.560 mils,Programmable UJT