Datasheet > CP613V-J176

CP613V-J176

更新时间： 2024-11-18 14:54:15

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
3页	318K
描述
1V,4V,50mA,350mW Bare die,24.000 X 21.000 mils,JFET

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CP613V-J176 数据手册

CP613V-J176

P-Channel JFET Die

www.centralsemi.com

The CP613V-J176 is a silicon P-Channel JFET designed for switching applications.

MECHANICAL SPECIFICATIONS:

Die Size

24 x 21 MILS

7.1 MILS

Die Thickness

Source Bonding Pad Size

Drain Bonding Pad Size

Gate Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

3.3 x 3.3 MILS

Al-Si – 17,000Å

Au-As – 10,000Å

1.97 MILS

5 INCHES

Gross Die Per Wafer

27,725

MAXIMUM RATINGS: (T =25°C)

Gate-Drain Voltage

SYMBOL

UNITS

Gate-Source Voltage

Gate Current

°C

Operating and Storage Junction Temperature

T , T

-65 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

=20V

1.0

GSS

=15V

2.0

DSS

I =1.0μA

GSS

=15V, I =10nA

1.0

4.0

GS(OFF)

DS(ON)

=0.1V

250

R0 (22-May 2019)

12 3

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