5秒后页面跳转
CP630-CZT127 PDF预览

CP630-CZT127

更新时间: 2024-09-30 21:14:27
品牌 Logo 应用领域
CENTRAL 开关晶体管
页数 文件大小 规格书
4页 591K
描述
Power Bipolar Transistor,

CP630-CZT127 技术参数

生命周期:Active包装说明:UNCASED CHIP, S-XUUC-N2
Reach Compliance Code:compliant风险等级:5.71
最大集电极电流 (IC):5 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):1000
JESD-30 代码:S-XUUC-N2元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:UNCASED CHIP
极性/信道类型:PNP表面贴装:YES
端子形式:NO LEAD端子位置:UPPER
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzBase Number Matches:1

CP630-CZT127 数据手册

 浏览型号CP630-CZT127的Datasheet PDF文件第2页浏览型号CP630-CZT127的Datasheet PDF文件第3页浏览型号CP630-CZT127的Datasheet PDF文件第4页 
CP630-CZT127  
PNP - Darlington Transistor Die  
5.0 Amp, 100 Volt  
www.centralsemi.com  
The CP630-CZT127 die is a silicon PNP Darlington power transistor designed for low speed  
switching and amplifier applications.  
MECHANICAL SPECIFICATIONS:  
Die Size  
80 x 80 MILS  
8.0 MILS  
Die Thickness  
E
Base Bonding Pad Size  
Emitter Bonding Pad Size  
Top Side Metalization  
Back Side Metalization  
Scribe Alley Width  
Wafer Diameter  
18 x 27 MILS  
34 x 34 MILS  
Al - 30,000Å  
Ti/Pd/Ag - 20,000Å  
2.4 MILS  
B
4 INCHES  
Gross Die Per Wafer  
1,445  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
UNITS  
V
A
V
V
V
100  
100  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
5.0  
Continuous Collector Current  
Peak Collector Current  
I
5.0  
A
C
I
8.0  
A
CM  
Continuous Base Current  
Operating and Storage Junction Temperature  
I
120  
mA  
°C  
B
T , T  
-65 to +150  
J
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
V
V
V
=100V  
200  
µA  
CBO  
CEO  
EBO  
CB  
CE  
EB  
=50V  
500  
2.0  
µA  
mA  
V
=5.0V  
BV  
I =30mA  
100  
CEO  
CE(SAT)  
CE(SAT)  
BE(ON)  
FE  
C
V
V
V
I =3.0A, I =12mA  
2.0  
4.0  
2.5  
V
C
B
I =5.0A, I =20mA  
V
C
B
V
=3.0V, I =3.0A  
V
CE  
CE  
CE  
CE  
CB  
C
h
h
V
V
V
V
=3.0V, I =500mA  
1000  
1000  
4.0  
C
=3.0V, I =3.0A  
FE  
C
f
=4.0V, I =3.0A, f=1.0MHz  
MHz  
pF  
T
C
C
=10V, I =0, f=1.0MHz  
300  
ob  
E
R0 (28-July 2016)  

与CP630-CZT127相关器件

型号 品牌 获取价格 描述 数据表
CP630-CZT127-CM CENTRAL

获取价格

Transistor
CP630-CZT127-CT CENTRAL

获取价格

Transistor
CP630-CZT127-WN CENTRAL

获取价格

Transistor
CP630-CZT127-WR CENTRAL

获取价格

Transistor
CP630-TIP127 CENTRAL

获取价格

Power Bipolar Transistor,
CP635-2N3791 CENTRAL

获取价格

Power Bipolar Transistor,
CP645 CENTRAL

获取价格

Power Transistor PNP, 8.0A Power Transistor Chip
CP647-2N6287 CENTRAL

获取价格

20A,100V Bare die,211.000 X 211.000 mils,Transistor-Bipolar Power (>1A)
CP647-MJ11015 CENTRAL

获取价格

Power Bipolar Transistor,
CP-64-D-2-T-ST2 SAMTEC

获取价格

Interconnection Device