Datasheet > CP611-TIP42C

CP611-TIP42C

更新时间： 2024-10-01 14:55:27

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
5页	627K
描述
100V,6A,2W Bare die,99.000 X 80.000 mils,Transistor-Bipolar Power (>1A)

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CP611-TIP42C 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.84

CP611-TIP42C 数据手册

CP611-TIP42C

PNP - High Current Transistor Die

6.0 Amp, 100 Volt

www.centralsemi.com

The CP611-TIP42C is a silicon PNP transistor designed for and high current applications.

MECHANICAL SPECIFICATIONS:

Die Size

80 x 99 MILS

12.5 1.0 MILS

12 x 32 MILS

13 x 46 MILS

Al – 50,000Å

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

Cr/Ni/Ag – 1,000Å/5,000Å/10,000Å

6.5 MILS

4 INCHES

Gross Die Per Wafer

1,450

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

100

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

5.0

Continuous Collector Current

Peak Collector Current

6.0

Continuous Base Current

Operating and Storage Junction Temperature

2.0

T , T

-65 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

=100V

0.4

0.7

1.0

CES

CEO

EBO

=60V

=5.0V

I =30mA

100

CEO

CE(SAT)

BE(ON)

I =6.0A, I =0.6A

1.5

2.0

=4.0V, I =6.0A

=4.0V, I =0.3A

3.0

=4.0V, I =3.0A

=10V, I =0.5A, f=1.0kHz

=10V, I =0.5A, f=1.0MHz

MHz

μs

I =6.0A, I = I =0.6A, R =5.0Ω

0.4

0.7

off

B1 B2

I =6.0A, I = I =0.6A, R =5.0Ω

μs

B1 B2

R1 (9-June 2017)

12 3 4 5

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