Datasheet > CP622-2N6027

CP622-2N6027

更新时间： 2024-11-18 14:55:19

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	470K
描述
40V,150mA Bare die,27.560 X 27.560 mils,Programmable UJT

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CP622-2N6027 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.76
触发设备类型：	PROGRAMMABLE UJT	Base Number Matches：	1

CP622-2N6027 数据手册

CP622-2N6027

Programmable

Unijunction Transistor Die

www.centralsemi.com

The CP622-2N6027 is a silicon PUT designed for adjustable characteristics such as Valley

Current (I ), and Peak Current (I )

MECHANICAL SPECIFICATIONS:

Die Size

27.5 x 27.5 MILS

Die Thickness

9.45 MILS

Anode Bonding Pad Size

Cathode Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

7.1 x 5.1 MILS

Al – 20,000Å

Au – 13,000Å

3.6 MILS

3 INCHES

8,894

BACKSIDE GATE

Gross Die Per Wafer

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Gate-Cathode Forward Voltage

Gate-Cathode Reverse Voltage

Gate-Anode Reverse Voltage

GKF

GKR

GAR

5.0

Anode-Cathode Voltage

5.0

TSM

TRM

Peak Non-Repetitive Forward Current (t=10µs)

Peak Repetitive Forward Current (t=20µs, D.C.=1.0%)

Peak Repetitive Forward Current (t=100µs, D.C.=1.0%)

DC Forward Anode Current

2.0

1.0

150

°C

DC Gate Current

Operating Junction Temperature

Storage Temperature

-50 to +100

-55 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

V =40V

MIN

MAX

UNITS

GAO

GKS

V =40V

2.0

5.0

µA

V =10V, R =1.0M

V =10V, R =10k

V =10V, R =1.0M

V =10V, R =10k

1.5

0.2

V =10V, R =200

V =10V, R =1.0M

1.6

0.6

1.5

V =10V, R =10k

I =50mA

V =20V, C =0.2µF

6.0

V =20V, C =0.2µF

R0 (26-July 2016)

12 3 4

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