Datasheet > CP611-TIP42C-CG

CP611-TIP42C-CG

更新时间： 2024-09-30 19:32:19

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CP611-TIP42C-CG 技术参数

PROCESS CP611

Power Transistor

Central

Semiconductor Corp.

PNP - Amp/Switch Transistor Chip

PROCESS DETAILS

Process

Die Size

EPITAXIAL BASE

80 X 99 MILS

12.5 ± 1 MILS

12 X 32 MILS

13 X 46 MILS

Al - 50,000Å

Die Thickness

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

Cr/Ni/Ag - 16,000Å

GEOMETRY

GROSS DIE PER 4 INCH WAFER

1,450

PRINCIPAL DEVICE TYPES

CJD42C

TIP42C

BACKSIDE COLLECTOR

145 Adams Avenue

Hauppauge, NY 11788 USA

Tel: (631) 435-1110

Fax: (631) 435-1824

www.centralsemi.com

R3 (21-September 2003)

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